Thermal ideality factor of hydrogenated amorphous silicon p-i-n solar cells

The performance of hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells is limited, as they contain a relatively high concentration of defects. The dark current voltage (JV) characteristics at low forward voltages of these devices are dominated by recombination processes. The recombination rate depends on the concentration of active...

Influence of trap states on dynamic properties of single grain silicon thin film transistors

The transient properties of single grain–thin film transistors (SG-TFTs) with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient and ac measurements show that the response of some...