Searched for:
(1 - 2 of 2)
document
Lee, M.J. (author), Youn, J.S. (author), Park, K.Y. (author), Choi, W.Y. (author)
We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-┬Ám complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche photodetector, which provides larger...
journal article 2014
document
Lee, M.J. (author), Sun, P. (author), Charbon, E. (author)
This paper reports on the first implementation of a single-photon avalanche diode (SPAD) in standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is realized in a circular shape, and it is based on a P+/N-well junction along with a P-well guard-ring structure formed by lateral diffusion of two...
journal article 2015