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Insights to emitter saturation current densities of boron implanted samples based on defects simulations

Mok, K.R.C. (author), Naber, R.C.G. (author), Nanver, L.K. (author)

Emitter saturation current densities, Joe have been investigated with different boron implantation dose and annealing conditions. The higher thermal budgets used here are shown experimentally to improve Joe, implying more complete defect dissolution. Simulations show that significant degradation in Joe can be attributed to the presence of...

conference paper 2012

document

Balanced ternary addition using a gated silicon nanowire

Mol, J.A. (author), Van der Heijden, J. (author), Verduijn, J. (author), Klein, M. (author), Remacle, F. (author), Rogge, S. (author)

Ternary logic has the lowest cost of complexity, here, we demonstrate a CMOS hardware implementation of a ternary adder using a silicon metal-on-insulator single electron transistor. Gate dependent rectifying behavior of a single electron transistor (SET) results in a robust three-valued output as a function of the potential of the single...

journal article 2011

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Stimulated terahertz emission due to electronic Raman scattering in silicon

Pavlov, S.G. (author), Böttger, U. (author), Hovenier, J.N. (author), Abrosimov, N.V. (author), Riemann, H. (author), Zhukavin, R.K. (author), Shastin, V.N. (author), Redlich, B. (author), Van der Meer, A.F.G. (author), Hübers, H.W. (author)

Stimulated Raman emission in the terahertz frequency range (4.8–5.1 THz and 5.9–6.5 THz) has been realized by optical excitation of arsenic donor centers in silicon at low temperatures. The Stokes shift of the observed laser emission is 5.42 THz which is equal to the Raman-active donor electronic transition between the ground 1s(A1) and the...

journal article 2009

document

Ultrasmall silicon quantum dots

Zwanenburg, F.A. (author), Van Loon, A.A. (author), Steele, G.A. (author), Rijmenam, C.E.W.M. (author), Balder, T. (author), Fang, Y. (author), Lieber, C.M. (author), Kouwenhoven, L.P. (author)

We report the realization of extremely small single quantum dots in p-type silicon nanowires, defined by Schottky tunnel barriers with Ni and NiSi contacts. Despite their ultrasmall size the NiSi–Si–NiSi nanowire quantum dots readily allow spectroscopy of at least ten consecutive holes, and additionally they display a pronounced excited-state...

journal article 2009

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Subthreshold channels at the edges of nanoscale triple-gate silicon transistors

Sellier, H. (author), Lansbergen, G.P. (author), Caro, J. (author), Rogge, S. (author), Collaert, N. (author), Ferain, I. (author), Jurczak, M. (author), Biesemans, S. (author)

The authors investigate the subthreshold behavior of triple-gate silicon field-effect transistors by low-temperature transport experiments. These three-dimensional nanoscale devices consist of a lithographically defined silicon nanowire surrounded by a gate with an active region as small as a few tens of nanometers down to 50×60×35?nm3....

journal article 2007

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On the surface roughness development of hydrogenated amorphous silicon deposited at low growth rates

Wank, M.A. (author), Van Swaaij, R.A.C.M.M. (author), Van de Sanden, M.C.M. (author)

The surface roughness evolution of hydrogenated amorphous silicon (a-Si:H) films has been studied using in situ spectroscopic ellipsometry for a temperature range of 150–400?°C. The effect of external rf substrate biasing on the coalescence phase is discussed and a removal/densification of a hydrogen-rich layer is suggested to explain the...

journal article 2009

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Angular resolved scattering by a nano-textured ZnO/silicon interface

Schulte, M. (author), Bittkau, K. (author), Jäger, K. (author), Ermes, M. (author), Zeman, M. (author), Pieters, B.E. (author)

Textured interfaces in thin-film silicon solar cells improve the efficiency by light scattering. A technique to get experimental access to the angular intensity distribution (AID) at textured interfaces of the transparent conductive oxide (TCO) and silicon is introduced. Measurements are performed on a sample with polished microcrystalline...

journal article 2011

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Imaging the formation of a p-n junction in a suspended carbon nanotube with scanning photocurrent microscopy

Buchs, G. (author), Barkelid, K.M. (author), Bagiante, S. (author), Steele, G.A. (author), Zwiller, V. (author)

We use scanning photocurrent microscopy (SPCM) to investigate individual suspended semiconducting carbon nanotube devices where the potential profile is engineered by means of local gates. In situ tunable p-n junctions can be generated at any position along the nanotube axis. Combining SPCM with transport measurements allows a detailed...

journal article 2011

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Terahertz Raman laser based on silicon doped with phosphorus

Pavlov, S.G. (author), Hübers, H.W. (author), Böttger, U. (author), Zhukavin, R.K. (author), Shastin, V.N. (author), Hovenier, J.N. (author), Redlich, B. (author), Abrosimov, N.V. (author), Riemann, H. (author)

Raman-type stimulated emission at frequencies between 5.0 and 5.2?THz as well as between 6.1 and 6.4?THz has been realized in silicon crystals doped by phosphorus donors. The Raman laser operates at around 5?K under optical excitation by a pulsed, frequency-tunable infrared free electron laser. The frequencies of the observed laser emission are...

journal article 2008

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On the effects of implantation temperature in helium implanted silicon

Oliviero, E. (author), David, M.L. (author), Beaufort, M.F. (author), Barbot, J.F. (author), Van Veen, A. (author)

He+ ions were implanted into silicon with a fluence of 5×10 16?cm?2 at different temperatures ranging from 473 to 1073 K. Samples were analyzed by thermal helium desorption spectroscopy and by transmission electron microscopy. As far as cavity formation is concerned, the behavior can be divided into three stages depending on the implantation...

journal article 2002

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Enhanced tunneling across nanometer-scale metal–semiconductor interfaces

Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author)

We have measured electrical transport across epitaxial, nanometer-sized metal–semiconductor interfaces by contacting CoSi2 islands grown on Si(111) with the tip of a scanning tunneling microscope. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be ? 104 times larger...

journal article 2002

document

Solution-processed polycrystalline silicon on paper

Trifunovic, M. (author), Shimoda, T. (author), Ishihara, R. (author)

Printing electronics has led to application areas which were formerly impossible with conventional electronic processes. Solutions are used as inks on top of large areas at room temperatures, allowing the production of fully flexible circuitry. Commonly, research in these inks have focused on organic and metal-oxide ink materials due to their...

journal article 2015

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Influence of trap states on dynamic properties of single grain silicon thin film transistors

Yan, F. (author), Migliorato, P. (author), Ishihara, R. (author)

The transient properties of single grain–thin film transistors (SG-TFTs) with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient and ac measurements show that the response of some...

journal article 2006

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Scaling of thermoelectric voltage induced by microwave radiation at the boundary between two dimensional electron systems

Kalmanovitz, N.R. (author), Hoxha, I. (author), Jin, Y. (author), Vitkalov, S.A. (author), Sarachik, M.P. (author), Larkin, I.A. (author), Klapwijk, T.M. (author)

journal article 2008

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Single atom doping for quantum device development in diamond and silicon

Weis, C.D. (author), Schuh, A. (author), Batra, A. (author), Persaud, A. (author), Rangelow, I.W. (author), Bokor, J. (author), Lo, C.C. (author), Cabrini, S. (author), Sideras-Haddad, E. (author), Fuchs, G.D. (author), Hanson, R. (author), Awschalom, D.D. (author), Schenkel, T. (author)

The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species, and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which function is based on the manipulation of quantum states in single atoms, such as proposed quantum computers....

journal article 2008

document

(100)-textured self-assembled square-shaped polycrystalline silicon grains by multiple shot excimer laser crystallization

He, M. (author), Ishihara, R. (author), Metselaar, W. (author), Beenakker, K. (author)

Strong preference for (100) surface and in-plane orientations has been observed in polycrystalline silicon film on SiO2 after crystallization with multiple excimer laser pulses. Laser induced periodic surface structure (LIPSS) is developed in the film, constructing self-assembled square-shaped grains. The clear texture can be observed in a...

journal article 2006

document

Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs

Paul, A. (author), Tettamanzi, G.C. (author), Lee, S. (author), Mehrotra, S.R. (author), Collaert, N. (author), Biesemans, S. (author), Rogge, S. (author), Klimeck, G. (author)

Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretical tight-binding (TB) calculations, this technique can be used to understand the dependence of the source-to-channel barrier height (Eb) and the active channel area ...

journal article 2011

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Integrated silicon optofluidic ring resonator

Testa, G. (author), Huang, Y. (author), Sarro, P.M. (author), Zeni, L. (author), Bernini, R. (author)

The feasibility of an integrated silicon optofluidic ring resonator is demonstrated. Liquid core antiresonant reflecting optical waveguides are used to realize a rectangular ring resonator with a multimode interference liquid core coupler between the ring and the bus waveguide. In this configuration the same waveguide used to confine the light...

journal article 2010

document

Simulation of twin boundary effect on characteristics of single grain-silicon thin film transistors

Yan, F. (author), Migliorato, P. (author), Ishihara, R. (author)

The influence of twin boundaries on the characteristics of single grain-silicon thin film transistors has been analyzed by three-dimensional simulation. The simulations show that the orientation and the location of a twin boundary could affect the field-effect mobility and the leakage current of a device. The field-effect mobility increases with...

journal article 2007

document

Solid-phase crystallization of ultra high growth rate amorphous silicon films

Sharma, K. (author), Ponomarev, M.V. (author), Verheijen, M.A. (author), Kunz, O. (author), Tichelaar, F.D. (author), Van de Sanden, M.C.M. (author), Creatore, M. (author)

In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11–60?nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (?1.5??m) polycrystalline silicon was obtained after SPC of high growth rate (?25?nm/s) deposited a-Si:H films. The...

journal article 2012