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Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layersMohammadi, V. (author), Nihtianov, S. (author)The lateral gas phase diffusion length of boron atoms, LB, along silicon and boron surfaces during chemical vapor deposition(CVD) using diborane (B2H6) is reported. The value of LB is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the...journal article 2016
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Ramachandra Rao, P. (author), Milosavljevic, S. (author), Kroth, U. (author), Laubis, C. (author), Nihtianov, S. (author)Newly developed “pure-boron” photodiodes, with high sensitivity and stability in the whole ultraviolet range (UV), are described. The main purpose of this work is to create and characterize a large-area UV photodiode, representing a structure of a pixel in a backside illuminated CMOS image sensor, featuring maximum fill factor and hence...lecture notes 2014
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Shi, L. (author), Nihtianov, S. (author), Scholze, F. (author), Gottwald, A. (author), Nanver, L.K. (author)In this paper, the optical and electrical performance of a newly developed silicon photodiode based on pure boron CVD technology (PureB-diodes) is introduced. Due to their extremely shallow p-n junction, with the depletion zone starting only a few nanometers below the surf ce, and nm-thin pure-boron-layer coverage of the anode surface, PureB...conference paper 2011
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Shi, L. (author), Sarubbi, F. (author), Nanver, L.K. (author), Kroth, U. (author), Gottwald, A. (author), Nihtianov, S. (author)In recent work, a novel silicon-based photodiode technology was reported to be suitable for producing radiation detectors for 193 nm deep-ultraviolet light and for the extreme-ultraviolet (EUV) spectral range. The devices were developed and fabricated at the Delft Institute of Microsystems and Nanoelectronics (DIMES), TU Delft. In this paper, we...journal article 2010
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Nabavi, M.R. (author), Nihtianov, S. (author)In this paper, we propose a novel interface concept for eddy current displacement sensors. A measurement method and a new front-end circuit are also proposed. The front-end circuit demonstrates excellent thermal stability, high resolution, and low-power consumption. The proposed idea is analytically investigated. The demodulation principle, as...journal article 2009
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- Nihtianov, S.N. (author), Shterev, G.P. (author), Petrov, N. (author), Meijer, G.C.M. (author) journal article 2001