The extraordinary role of the AlN interlayer in growth of AlN sputtered on Ti electrodes

The structure of AlN layers grown on Ti with and without an AlN interlayer between the Si substrate and the Ti layer is investigated. The AlN grains take over the orientation of the Ti columnar grains in both cases. Surprisingly, the Ti grains do not take over completely the orientations of the AlN grains of the interlayer, and show the same...

Enhancement of AlN Slender Piezoelectric Cantilevers Actuation by PECVD Silicon Nitride Coating

Actuation enhancement for AlN piezoelectric cantilevers is achieved by coating slender AlN beams with a thin PECVD silicon nitride (SiN) layer. Very good linearity and high deflection, up to 19 nm/V of actuation deflection for 200 ?m long cantilevers, at quasi-static mode, is obtained for a 500 nm SiN top layer. This value is three times larger...

Fabrication of AlN slender piezoelectric cantilevers for highspeed MEMS actuations

Very thin piezoelectric cantilevers based on AlN layers using titanium Ti thin film electrodes are fabricated and characterized. By optimizing the Ti sputtering parameters, a very low stress (156 MPa) layers stack with high crystallinity and strong (002) orientation of the AlN films is obtained. Finally, a simple fabrication process, fully CMOS...