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Overview of key results achieved in H2020 HighLite project helping to raise the EU PV industries' competitiveness
Overview of key results achieved in H2020 HighLite project helping to raise the EU PV industries' competitiveness
Avalanche-mode Si light-emitting transistor for narrow-band emission near 760 nm
Avalanche-mode Si light-emitting transistor for narrow-band emission near 760 nm
Electrical TCAD Study of the Low-Voltage Avalanche-Mode Superjunction LED
Electrical TCAD Study of the Low-Voltage Avalanche-Mode Superjunction LED
A Stand-Alone Si-Based Porous Photoelectrochemical Cell
A Stand-Alone Si-Based Porous Photoelectrochemical Cell
Vertical SiC taper with a small angle fabricated by slope transfer method
Vertical SiC taper with a small angle fabricated by slope transfer method
High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology
High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology
Millimeter-Wave On-Wafer TRL Calibration Employing 3-D EM Simulation-Based Characteristic Impedance Extraction
Millimeter-Wave On-Wafer TRL Calibration Employing 3-D EM Simulation-Based Characteristic Impedance Extraction
Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers
Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers
Helium ion beam induced growth of hammerhead AFM probes
Helium ion beam induced growth of hammerhead AFM probes
Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode
Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode
A first single-photon avalanche diode fabricated in standard SOI CMOS technology with a full characterization of the device
A first single-photon avalanche diode fabricated in standard SOI CMOS technology with a full characterization of the device
Reducing intrinsic loss in superconducting resonators by surface treatment and deep etching of silicon substrates
Reducing intrinsic loss in superconducting resonators by surface treatment and deep etching of silicon substrates
Solution-processed polycrystalline silicon on paper
Solution-processed polycrystalline silicon on paper
All-optical on-chip sensor for high refractive index sensing
All-optical on-chip sensor for high refractive index sensing
Single-grain Si thin-film transistors for monolithic 3D-ICs and flexible electronics
Single-grain Si thin-film transistors for monolithic 3D-ICs and flexible electronics
A fully-integrated 12.5-Gb/s 850-nm CMOS optical receiver based on a spatially-modulated avalanche photodetector
A fully-integrated 12.5-Gb/s 850-nm CMOS optical receiver based on a spatially-modulated avalanche photodetector
Wide-bandwidth charge sensitivity with a radio-frequency field-effect transistor
Wide-bandwidth charge sensitivity with a radio-frequency field-effect transistor
Efficiency enhancement calculations of state-of-the-art solar cells by luminescent layers with spectral shifting, quantum cutting, and quantum tripling function
Efficiency enhancement calculations of state-of-the-art solar cells by luminescent layers with spectral shifting, quantum cutting, and quantum tripling function
Transport through a single donor in p-type silicon
Transport through a single donor in p-type silicon
Single-grain Si thin-film transistors on flexible polyimide substrate fabricated from doctor-blade coated liquid-Si
Single-grain Si thin-film transistors on flexible polyimide substrate fabricated from doctor-blade coated liquid-Si
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