Temperature dependent trap characterisation and modelling of silicon carbide MOS capacitor

Due to the deficient passivation of the interface between silicon carbide and silicon dioxide, the defect-induced capture and release of trapped charges triggered by external Bias Temperature Stress (BTS) leads to parameter shifts and degraded device performance. This study models the trap-induced transient current in silicon carbide metal-oxide...

A Reliability Prediction for Integrated LED Lamp with Electrolytic Capacitor-Free Driver

This paper studies the interaction of catastrophic failure of the driver and LED luminous flux decay for an integrated LED lamp with an electrolytic capacitor-free LED driver. Electronic thermal simulations are utilized to obtain the lamp's dynamic history of temperature and current for two distinct operation modes: constant current mode (CCM...