A Continuously Updated Package-Degradation Model reflecting Thermomechanical Changes at Different Thermo-Oxidative Stages of Moulding Compound

Moulding compounds used for encapsulating electronics typically occupy a large portion of package volume and are most exposed to the external environment. Under harsh conditions such as high temperature, humidity, and mechanical vibrations, constituent materials of electronic components degrade, resulting in a change in their thermal, mechanical...

Implementation of Fully Coupled Electromigration Theory in COMSOL

In this paper, a 3D and fully coupled electromigration modeling is implemented using COMSOL. The fully coupled multi-physics theory has a unique set of partial differential equations, which cannot be directly simulated with the standard finite element software such as ABAQUS and ANSYS. With the weak form PDE modulus in COMSOL, the weak form of...

Implementation of General Coupling Model of Electromigration in ANSYS

In this paper, a recently developed theory - general coupling model of electromigration, is implemented in ANSYS. We first identify several errors provided in ANSYS manual for electromigration modeling. Then the general coupling model is implemented in ANSYS and the detailed description is presented. Finally, a 1-D confined metal line with a...

Numerical Simulations of Full Scale Tests Investigating Effect of Fault Movement on Buried Pipeline

This master thesis investigates the response of buried pipelines under ground-induced deformations through the finite element simulations of a testing program undertaken at TU Delft Stevinlab II as part of the GIPIPE research project.

Graphene based piezoresistive pressure sensor

We present a pressure sensor based on the piezoresistive effect of graphene. The sensor is a 100?nm thick, 280??m wide square silicon nitride membrane with graphene meander patterns located on the maximum strain area. The multilayer, polycrystalline graphene was obtained by chemical vapor deposition. Strain in graphene was generated by applying...

X-ray investigation of buried SiGe islands for devices with strain-enhanced mobility

In this work self-organized SiGe islands are used as stressors for Si capping layers, which later act as carrier channels in field effect transistors. To be able to address individual islands and to obtain a sufficiently narrow distribution of their properties, the SiGe islands are grown by molecular beam epitaxy on prepatterned Si substrates,...