Electron-beam-induced deformations of SiO2 nanostructures

The imaging beam of a transmission electron microscope can be used to fine tune critical dimensions in silicon oxide nanostructures. This technique is particularly useful for the fabrication of nanopores with single-nanometer precision, down to 2 nm. We report a detailed study on the effect of electron-beam irradiation on apertures with various...

Magnetic properties of electroplated nano/microgranular NiFe thin films for rf application

A granular NiFe thin film with large in-plane magnetic anisotropy and high ferromagnetic-resonance frequency developed for radio-frequency integrated circuit (IC) applications is presented. During the deposition, three-dimensional (3D) growth occurs, yielding NiFe grains (? ? 1.0??m). Nanonuclei (? ? 30–50?nm) are observed in single NiFe grains...

Nanoparticles made-to-measure: Aerosols prove to be indispensable for nanotechnology

Is it possible to make platinum particles with a diameter of less than eight nanometres? That was the question Jan Marijnissen at the aerosol lab of Delft ChemTech was asked. Together with graduate student Jan van Erven, the famous aerosol expert Sheldon Friedlander of the University of California (UCLA), and the University of Karlsruhe, Germany...

Magnetovibrational coupling in small cantilevers

A nanomagnetomechanical system consisting of a cantilever and a thin magnetic film is predicted to display magnetovibrational modes, which should enable applications for sensors and actuators. The “polaritonic” modes can be detected by line splittings in ferromagnetic resonance spectra.

Scaling of nano-Schottky-diodes

A generally applicable model is presented to describe the potential barrier shape in ultrasmall Schottky diodes. It is shown that for diodes smaller than a characteristic length lc (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes the Schottky barrier thickness decreases with...

Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors

We report on the fabrication of a dual-gated single-electron transistor (SET) based on a quantum dot (QD) formed by selective area growth of metalorganic vapor-phase epitaxy, and its low-temperature transport properties. We observe clear Coulomb oscillations in a SET fabricated in combination with direct growth of nanostructures and...

Nanofabrication of electrodes with sub-5 nm spacing for transport experiments on single molecules and metal clusters

Deposition and atomic force microscopy of individual phthalocyanine polymers between nanofabricated electrodes