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Van der Zanden, B. (author), Van de Krol, R. (author), Schoonman, J. (author), Goossens, A. (author)
The photoluminescence (PL) of poly(3-octyl-thiophene) (P3OT) thin films applied on TiO2 substrates is compared to the PL of P3OT films applied on quartz. Quenching of excitons occurs at the P3OT/TiO2 interface and not at the P3OT/quartz interface. Yet, in the former case the PL intensity is stronger than in the latter. In particular, P3OT films...
journal article 2004
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Birowosuto, M.D. (author), Dorenbos, P. (author), Van Eijk, C.W.E. (author), Krämer, K.W. (author), Güdel, H.U. (author)
In this paper, we investigated the scintillation properties of LuI3:Ce3+. Radioluminescence, light output, energy resolution, and ?-scintillation decay are reported. We find an extremely high light output of 98?000±10?000?photons/MeV. LuI3:Ce3+ also gives a very high electron-hole (e-h) pair response when it is coupled with an avalanche...
journal article 2006
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Dorenbos, P. (author), Van der Kolk, E. (author)
Knowledge from lanthanide spectroscopy on wide band gap (6–10?eV) inorganic compounds is used to understand and predict optical and electronic properties of the lanthanides in the III-V semiconductor GaN. For the first time the location of the 4fn ground state energy of each divalent and trivalent lanthanide ion relative to the valence and...
journal article 2006
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Appleby, G.A. (author), Edgar, A. (author), Williams, G.V.M. (author), Bos, A.J.J. (author)
A glass-ceramic thermal neutron imaging plate material is reported. The material consists of a neutron sensitive 2B2O3–Li2O glass matrix containing nanocrystallites of the storage phosphor BaCl2:Eu2+. When doped with 0.5?mol?% Eu2+, the neutron induced photostimulated luminescence (PSL) conversion efficiency of the 10B enriched glass-ceramic is...
journal article 2006
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Han, B. (author), Liang, H. (author), Lin, H. (author), Zhong, J. (author), Su, Q. (author), Dorenbos, P. (author), Birowosuto, M.D. (author), Zhang, G. (author), Fu, Y. (author)
The phosphors Ba3Gd(BO3)3:Ce3+ were prepared by a solid-state reaction technique at high temperature. The vacuum ultraviolet-ultraviolet and visible spectroscopic properties of the phosphors together with decay time curves are investigated and discussed. The spectroscopic properties are explained by occupancy of Ce3+ at two different Gd sites in...
journal article 2007
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Selling, J. (author), Schweizer, S. (author), Birowosuto, M.D. (author), Dorenbos, P. (author)
Single crystals of Ce-activated BaCl2, BaBr2, and BaI2 were investigated under x-ray and ?-ray excitation. The Ce3+-related x-ray excited luminescence in BaBr2 shifts significantly to longer wavelengths upon increasing the doping level from 0.1% to 1%. In Ce-activated BaCl2 only a slight shift can be observed. BaI2 does not show any Ce3+-related...
journal article 2007
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Van der Kolk, E. (author), Dorenbos, P. (author), Krämer, K. (author), Biner, D. (author), Güdel, H.U. (author)
journal article 2008
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Christova, C.G. (author), Stouwdam, J.W. (author), Eijkemans, T.J. (author), Silov, A.Y. (author), Van der Heijden, R.W. (author), Kemerink, M. (author), Janssen, R.A.J. (author), Salemink, H.W.M. (author)
Remarkable photoluminescence enhancement (PLE) in submonolayer films of PbSe nanocrystals (NCs) upon continuous illumination was observed. The intensity increase from films on InP substrates was highest in vacuum, while for films on Si/SiO2 substrates the PLE was stronger in air. The magnitude of the PLE was found to depend on the excitation...
journal article 2008
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Krumpel, A.H. (author), Van der Kolk, E. (author), Zeelenberg, D. (author), Bos, A.J.J. (author), Krämer, K.W. (author), Dorenbos, P. (author)
Photo- and thermoluminescence (TL) spectra of NaLaF4:Ln3+ (Ln = Ce,Pr,Nd,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm) and NaLaF4:Ce3+, Ln3+ (Ln = Nd,Sm,Ho,Er,Tm) are presented and used together with the empirical Dorenbos model in order to establish the 4f energy level positions of all tri- and divalent lanthanide ions doped in NaLaF4. The information will be...
journal article 2008
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Perinetti, U. (author), Akopian, N. (author), Samsonenko, Y.B. (author), Bouravleuv, A.D. (author), Cirlin, G.E. (author), Zwiller, V. (author)
We report on optical studies of single InAs quantum dots grown on vicinal GaAs(001) surfaces. To ensure low quantum dot density and appropriate size, we deposit InAs layers 1.4 or 1.5 ML thick, thinner than the critical thickness for Stranski–Krastanov quantum dot formation. These dots show sharp and bright photoluminescence. Lifetime...
journal article 2009
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Van der Sar, T. (author), Heeres, E.C. (author), Dmochowski, G.M. (author), De Lange, G. (author), Robledo, L. (author), Oosterkamp, T.H. (author), Hanson, R. (author)
Precise control over the position of a single quantum object is important for many experiments in quantum science and nanotechnology. We report on a technique for high-accuracy positioning of individual diamond nanocrystals. The positioning is done with a home-built nanomanipulator under real-time scanning electron imaging, yielding an accuracy...
journal article 2009
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Van Weert, M.H.M. (author), Den Heijer, M. (author), Van Kouwen, M.P. (author), Algra, R.E. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, L.P. (author), Zwiller, V. (author)
We report voltage dependent photoluminescence experiments on single indium arsenide phosphide (InAsP) quantum dots embedded in vertical surround-gated indium phosphide (InP) nanowires. We show that by tuning the gate voltage, we can access different quantum dot charge states. We study the anisotropic exchange splitting by polarization analysis,...
journal article 2010
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Akopian, N. (author), Perinetti, U. (author), Wang, L. (author), Rastelli, A. (author), Schmidt, O.G. (author), Zwiller, V. (author)
We study single GaAs quantum dots with optical transitions that can be brought into resonance with the widely used D2 transitions of rubidium atoms. We achieve resonance by Zeeman or Stark shifting the quantum dot levels. We discuss an energy stabilization scheme based on the absorption of quantum dot photoluminescence in a rubidium vapor. This...
journal article 2010
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Dorenbos, S.N. (author), Sasakura, H. (author), Van Kouwen, M.P. (author), Akopian, N. (author), Adachi, S. (author), Namekata, N. (author), Jo, M. (author), Motohisa, J. (author), Kobayashi, Y. (author), Tomioka, K. (author), Fukui, T. (author), Inoue, S. (author), Kumano, H. (author), Natarajan, C.M. (author), Hadfield, R.H. (author), Zijlstra, T. (author), Klapwijk, T.M. (author), Zwiller, V. (author), Suemune, I. (author)
We report the experimental demonstration of single-photon and cascaded photon pair emission in the infrared, originating from a single InAsP quantum dot embedded in a standing InP nanowire. A regular array of nanowires is fabricated by epitaxial growth on an electron-beam patterned substrate. Photoluminescence spectra taken on single quantum...
journal article 2010
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Reimer, M.E. (author), van Kouwen, M.P. (author), Barkelid, M. (author)
We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along the growth axis of an InP nanowire. Under forward bias, light is emitted from the single quantum dot by...
journal article 2011
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Van de Krol, R. (author), Ségalini, J. (author), Enache, C.S. (author)
The properties of thin film InVO4 photoanodes for water splitting have been studied. Compact films of InVO4 were prepared by spray pyrolysis and are found to be stable between pH 3 and 11. Although the indirect bandgap is 3.2 eV, a modest amount of visible light absorption is observed. The origin of this absorption is attributed to the presence...
journal article 2011
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De Boer, W.D.A.M. (author), Trinh, M.T. (author), Timmerman, D. (author), Schins, J.M. (author), Siebbeles, L.D.A. (author), Greogorkiewicz, T. (author)
We report on investigations of optical generation of carriers in Si nanocrystals embedded in SiO2 matrix by time-resolved induced absorption technique. Results obtained for excitation below and above twice the bandgap energy h??<?2Eg and h??>?2Eg show very similar decay characteristics (within ?resolution ? 100 fs). When intensity of the signal...
journal article 2011
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Ding, X. (author), Liang, H. (author), Hou, D. (author), Su, Q. (author), Dorenbos, P. (author), Sun, S. (author), Tao, Y. (author)
Ce3+-doped Ba3MgSi2O8 phosphors were prepared by a solid-state reaction route. The photoluminescence properties in the vacuum ultraviolet-vis spectral range and the x ray excited radioluminescence were investigated. Ce3+ ions were found to enter three different sites in the host lattice. Five excitation bands and two emission bands of Ce(1)3+...
journal article 2011
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Wang, J. (author), Plissard, S. (author), Hocevar, M. (author), Vu, T.T.T. (author), Zehender, T. (author), Immink, G.G.W. (author), Verheijen, M.A. (author), Haverkort, J. (author), Bakkers, E.P.A.M. (author)
We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy. Precise positioning of these NWs is demonstrated by electron beam lithography. The vertical NW yield can be controlled by different...
journal article 2012
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Botterman, J. (author), Van den Eeckhout, K. (author), Bos, A.J.J. (author), Dorenbos, P. (author), Smet, P.F. (author)
In this work we study the persistent luminescence properties of europium-doped alkaline earth silicon oxynitrides (CaSi2O2N2, SrSi2O2N2 and BaSi2O2N2). All compounds show afterglow emission, with an emission spectrum which is similar to the steady state photoluminescence. The afterglow decay time for BaSi2O2N2:Eu and SrSi2O2N2:Eu is about 50 and...
journal article 2012
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