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Botman, A. (author), Hagen, C.W. (author), Li, J. (author), Thiel, B.L. (author), Dunn, K.A. (author), Mulders, J.J.L. (author), Randolph, S. (author), Toth, M. (author)
The material grown in a scanning electron microscope by electron beam-induced deposition (EBID) using Pt(PF3)4 precursor is shown to be electron beam sensitive. The effects of deposition time and postgrowth electron irradiation on the microstructure and resistivity of the deposits were assessed by transmission electron microscopy, selected area...
journal article 2009
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Botman, A. (author), Mulders, J.J.L. (author), Hagen, C.W. (author)
The creation of functional nanostructures by electron-beam-induced deposition (EBID) is becoming more widespread. The benefits of the technology include fast ‘point-and-shoot’ creation of three-dimensional nanostructures at predefined locations directly within a scanning electron microscope. One significant drawback to date has been the low...
journal article 2009
document
Mulders, J.J.L. (author), Botman, A. (author)
One technique to create small Pt and Au nano scale direct structures is Electron Beam Induced Deposition (EBID). These structures however, often suffer from included carbon, as the related precursor often is an organo metallic chemical substance. Research programs focus on optimizing the EBID process to minimize the carbon content of the...
journal article 2009
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Botman, A. (author), Hesselberth, M. (author), Mulders, J.J.L. (author)
Focused electron-beam-induced deposition (EBID) allows the rapid fabrication of three-dimensional nanodevices and metallic wiring of nanostructures, and is a promising technique for many applications in nanoresearch. The authors present two topics on platinum-containing nanostructures created by EBID. First, they report on a TEM study of the...
journal article 2008
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Botman, A. (author), De Winter, D.A.M. (author), Mulders, J.J.L. (author)
Electron-beam-induced deposition of platinum from methylcyclopentadienyl-platinum-trimethyl was performed with a focused electron beam at low landing energies, down to 10?eV. The deposition growth rate is maximal at 140?eV, with the process being over ten times more efficient than at 20?kV. No significant dependence of composition with landing...
journal article 2008
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