Raman Fingerprint of Pressure-Induced Phase Transitions in TiS₃Nanoribbons: Implications for Thermal Measurements under Extreme Stress Conditions

Two-dimensional layered trichalcogenide materials have recently attracted the attention of the scientific community because of their robust mechanical and thermal properties and applications in opto- and nanoelectronics devices. We report the pressure dependence of out-of-plane Ag Raman modes in high quality few-layer titanium trisulfide ...

High Current Density Electrical Breakdown of TiS₃ Nanoribbon-Based Field-Effect Transistors

The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, the high current density...