Searched for: author:"Asadi, Kamal"
(1 - 7 of 7)
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Li, Mengmeng (author), Mangalore, Deepthi Kamath (author), Zhao, Jingbo (author), Carpenter, Joshua H. (author), Yan, Hongping (author), Ade, Harald (author), Müllen, Klaus (author), Blom, Paul W.M. (author), Pisula, Wojciech (author), de Leeuw, D.M. (author), Asadi, Kamal (author), Yan, He (author)
It is still a great challenge to fabricate conjugated polymer monolayer field-effect transistors (PoM-FETs) due to intricate crystallization and film formation of conjugated polymers. Here we demonstrate PoM-FETs based on a single monolayer of a conjugated polymer. The resulting PoM-FETs are highly reproducible and exhibit charge carrier...
journal article 2018
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Morant-Miñana, Maria C. (author), Heidler, Jonas (author), Glasser, Gunnar (author), Lu, Hao (author), Berger, Rüdiger (author), Gil-Gonzalez, Nerea (author), Müllen, Klaus (author), de Leeuw, D.M. (author), Asadi, Kamal (author)
Re-establishment of electrical conductivity in graphene oxide (GO), the insulating form of graphene, is (partially) accomplished by reduction through high temperature treatments in a reducing atmosphere, or using strongly reducing chemicals or electrolytic processes. The reduction methods are suited for bulk graphene oxide. Spatially resolved...
journal article 2018
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Sharifi Dehsari, Hamed (author), Kumar, Manasvi (author), Ghittorelli, Matteo (author), Glasser, Gunnar (author), Lenz, Thomas (author), de Leeuw, D.M. (author), Torricelli, Fabrizio (author), Asadi, Kamal (author)
Solution-processed memory diodes based on phase separated blends of ferroelectric and semiconducting polymers in the low resistance on-state operate similar to a vertical field-effect transistor at the pinch-off. Numerical simulations have shown that the performance of the diode is dominated by the conduction of charge carriers at the...
journal article 2018
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Ghittorelli, M. (author), Lenz, Thomas (author), Dehsari, H.S. (author), Zhao (赵冬), Dong (author), Asadi, Kamal (author), Blom, Paul W.M. (author), Kovács-Vajna, Z. M. (author), de Leeuw, D.M. (author), Torricelli, F. (author)
Non-volatile memories—providing the information storage functionality—are crucial circuit components. Solution-processed organic ferroelectric memory diodes are the non-volatile memory candidate for flexible electronics, as witnessed by the industrial demonstration of a 1 kbit reconfigurable memory fabricated on a plastic foil. Further progress,...
journal article 2017
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Asadi, Kamal (author), van der Veen, M.A. (author)
Ferroelectric metal–organic frameworks are emerging as an exciting field of research and have witnessed great progress in the last decade. In this contribution, we briefly discuss ferroelectricity and its means of demonstration. Three mechanisms that lead to ferroelectricity are identified and critically discussed. On the basis of the...
journal article 2016
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Lenz, T. (author), Dehsari, H.S. (author), Asadi, Kamal (author), Blom, PWM (author), Groen, W.A. (author), de Leeuw, D.M. (author)
We demonstrate that ferroelectric memory diodes can be utilized as switching type positive temperature coefficient (PTC) thermistors. The diode consists of a phase separated blend of a ferroelectric and a semiconducting polymer stacked between two electrodes. The current through the semiconducting polymer depends on the ferroelectric...
journal article 2016
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Zhao, D (author), Asadi, Kamal (author), Groen, W.A. (author), Blom, PWM (author), de Leeuw, D.M. (author)
A homogeneous ferroelectric single crystal exhibits only two remanent polarization states that are stable over time, whereas intermediate, or unsaturated, polarization states are thermodynamically instable. Commonly used ferroelectric materials however, are inhomogeneous polycrystalline thin films or ceramics. To investigate the stability of...
journal article 2016
Searched for: author:"Asadi, Kamal"
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