Searched for: author%3A%22Bae%2C+D.%22
(1 - 1 of 1)
document
Bae, D. (author), Kanellos, Gerasimos (author), Wedege, Kristina (author), Dražević, Emil (author), Bentien, Anders (author), Smith, W.A. (author)
MoOX is commonly considered to be a high work-function semiconductor. From x-ray photoelectron spectroscopy and photoelectrochemical analysis, it is shown that MoOX can be considered as an effective hole transfer layer for the GaP-based device. Specifically, in the absence of carbon contamination using an ion beam cleaning step, the oxygen...
journal article 2020