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Wiggers, F. B. (author), Bui, H.V. (author), Friedlein, R. (author), Yamada-Takamura, Y. (author), Schmitz, J.E.J. (author), Kovalgin, A. Y. (author), de Jong, M (author)
We present a method for the formation of an epitaxial surface layer involving B, N, and Si atoms on a ZrB<sub>2</sub>(0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH<sub>3</sub> molecules with the silicene-terminated ZrB<sub>2</sub> surface was...
journal article 2016