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Gagliano, L. (author), Kruijsse, M. (author), Schefold, J. D.D. (author), Belabbes, A. (author), Verheijen, M.P.A.M. (author), Meuret, S. (author), Kölling, S. (author), Polman, A. (author), Bechstedt, F. (author), Haverkort, J. E.M. (author), Bakkers, E.P.A.M. (author)
Direct band gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum, are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the "green gap". Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here...
journal article 2018
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Assali, S. (author), Lähnemann, J. (author), Vu, TTT (author), Jöns, K.D. (author), Gagliano, L (author), Verheijen, M. A. (author), Akopian, N. (author), Bakkers, E.P.A.M. (author), Haverkort, J. E.M. (author)
One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a...
journal article 2017