A 0.5e_rms⁻ Temporal Noise CMOS Image Sensor With Gm-Cell-Based Pixel and Period-Controlled Variable Conversion Gain

A deep subelectron temporal noise CMOS image sensor (CIS) with a Gm-cell based pixel and a correlated-double charge-domain sampling technique has been developed for photon-starved imaging applications. With the proposed technique, the CIS, which is implemented in a standard 0.18-μm CIS process, features pixel-level amplification and achieves an...