Investigating transfer gate potential barrier by feed-forward effect measurement

In a 4T pixel, the transfer gate (TG) “OFF” surface potential is one of the important parameters, which determines the pinned photodiode (PPD) full well capacity. The feed-forward effect measurement is a powerful tool to characterize the relationship of the PPD injection potential and the feed-forward electrons. In this paper, a parameter Vb is...

Temporal Noise Reduction in CMOS Image Sensors

In pursuit of achieving the noise condition of single-photon imaging, system-level and circuit-level innovations and optimizations for CMOS image sensor (CIS) noise reduction are called for. Stimulated by this motivation, this thesis focuses on reducing the temporal noise generated in the pixels and the readout electronics.

Influence of assortativity and degree-preserving rewiring on the spectra of networks

Newman’s measure for (dis)assortativity, the linear degree correlation coefficient ?D, is reformulated in terms of the total number Nk of walks in the graph with k hops. This reformulation allows us to derive a new formula from which a degree-preserving rewiring algorithm is deduced, that, in each rewiring step, either increases or decreases ?D...

Community overlays upon real-world complex networks

Many networks are characterized by the presence of communities, densely intra-connected groups with sparser inter-connections between groups. We propose a community overlay network representation to capture large-scale properties of communities. A community overlay Go can be constructed upon a network G, called the underlying network, by (a)...

Spectral graph analysis of modularity and assortativity

Expressions and bounds for Newman’s modularity are presented. These results reveal conditions for or properties of the maximum modularity of a network. The influence of the spectrum of the modularity matrix on the maximum modularity is discussed. The second part of the paper investigates how the maximum modularity, the number of clusters, and...

Influence of assortativity and degree-preserving rewiring on the spectra of networks

Temporal noise analysis of charge-domain sampling readout circuits for cmos image sensors

This paper presents a temporal noise analysis of charge-domain sampling readout circuits for Complementary Metal-Oxide Semiconductor (CMOS) image sensors. In order to address the trade-off between the low input-referred noise and high dynamic range, a Gm-cell-based pixel together with a charge-domain correlated-double sampling (CDS) technique...

A 0.5e_rms⁻ Temporal Noise CMOS Image Sensor With Gm-Cell-Based Pixel and Period-Controlled Variable Conversion Gain

A deep subelectron temporal noise CMOS image sensor (CIS) with a Gm-cell based pixel and a correlated-double charge-domain sampling technique has been developed for photon-starved imaging applications. With the proposed technique, the CIS, which is implemented in a standard 0.18-μm CIS process, features pixel-level amplification and achieves an...

Integrated impedance bridge for absolute capacitance measurements at cryogenic temperatures and finite magnetic fields

We developed an impedance bridge that operates at cryogenic temperatures (down to 60 mK) and in perpendicular magnetic fields up to at least 12 T. This is achieved by mounting a GaAs HEMT amplifier perpendicular to a printed circuit board containing the device under test and thereby parallel to the magnetic field. The measured amplitude and...