Searched for: author%3A%22Grimaldi%2C+G.%22
(1 - 14 of 14)
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Geuchies, J.J. (author), Dijkhuizen, Robbert (author), Koel, Marijn (author), Grimaldi, G. (author), du Fossé, I. (author), Evers, W.H. (author), Hens, Zeger (author), Houtepen, A.J. (author)
Colloidal nanoplatelets (NPLs) are promising materials for lasing applications. The properties are usually discussed in the framework of 2D materials, where strong excitonic effects dominate the optical properties near the band edge. At the same time, NPLs have finite lateral dimensions such that NPLs are not true extended 2D structures. Here...
journal article 2022
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Crisp, R.W. (author), Hashemi, Fatemeh S.M. (author), Alkemade, J. (author), Kirkwood, N.R.M. (author), Grimaldi, G. (author), Kinge, S.S. (author), Siebbeles, L.D.A. (author), van Ommen, J.R. (author), Houtepen, A.J. (author)
To improve the stability and carrier mobility of quantum dot (QD) optoelectronic devices, encapsulation or pore infilling processes are advantageous. Atomic layer deposition (ALD) is an ideal technique to infill and overcoat QD films, as it provides excellent control over film growth at the sub-nanometer scale and results in conformal...
journal article 2020
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Geuchies, J.J. (author), Brynjarsson, Baldur (author), Grimaldi, G. (author), Gudjónsdóttir, S. (author), van der Stam, W. (author), Evers, W.H. (author), Houtepen, A.J. (author)
Solution-processed quantum dot (QD) lasers are one of the holy grails of nanoscience. They are not yet commercialized because the lasing threshold is too high: one needs >1 exciton per QD, which is difficult to achieve because of fast nonradiative Auger recombination. The threshold can, however, be reduced by electronic doping of the QDs,...
journal article 2020
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Grimaldi, G. (author)
The generation of excited carrier via light absorption (photogeneration) and their ability to propagate in space in Quantum Dot (QD) films affect critically the performance of QD-based optoelectronic devices. The work performed in this thesis is aimed at increasing the understanding of fundamental processes occurring in QD solutions and QD films...
doctoral thesis 2019
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Spoor, F.C.M. (author), Grimaldi, G. (author), Kinge, Sachin (author), Houtepen, A.J. (author), Siebbeles, L.D.A. (author)
Carrier multiplication (CM) is the process in which multiple electron–hole pairs are created upon absorption of a single photon in a semiconductor. CM by an initially hot charge carrier occurs in competition with cooling by phonon emission, with the respective rates determining the CM efficiency. Up until now, CM rates have only been calculated...
journal article 2019
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Grimaldi, G. (author), Geuchies, J.J. (author), van der Stam, W. (author), du Fossé, I. (author), Brynjarsson, Baldur (author), Kirkwood, N.R.M. (author), Kinge, S.S. (author), Siebbeles, L.D.A. (author), Houtepen, A.J. (author)
In transient absorption (TA) measurements on Cd-chalcogenide quantum dots (QDs), the presence of a band-edge (BE) bleach signal is commonly attributed entirely to conduction-band electrons in the 1S(e) state, neglecting contributions from BE holes. While this has been the accepted view for more than 20 years, and has often been used to...
journal article 2019
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van der Stam, W. (author), Grimaldi, G. (author), Geuchies, J.J. (author), Gudjónsdóttir, S. (author), Van Uffelen, Pieter T. (author), Van Overeem, Mandy (author), Brynjarsson, Baldur (author), Kirkwood, N.R.M. (author), Houtepen, A.J. (author)
In this work, we systematically study the spectroelectrochemical response of CdSe quantum dots (QDs), CdSe/CdS core/shell QDs with varying CdS shell thicknesses, and CdSe/CdS/ZnS core/shell/shell QDs in order to elucidate the influence of localized surface trap states on the optoelectronic properties. By correlating the differential...
journal article 2019
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Grimaldi, G. (author), Van Den Brom, Mark J. (author), du Fossé, I. (author), Crisp, R.W. (author), Kirkwood, N.R.M. (author), Gudjónsdóttir, S. (author), Geuchies, J.J. (author), Kinge, S.S. (author), Siebbeles, L.D.A. (author), Houtepen, A.J. (author)
Colloidal quantum dots (QDs) allow great flexibility in the design of optoelectronic devices, thanks to their size-dependent optical and electronic properties and the possibility to fabricate thin films with solution-based processing. In particular, in QD-based heterojunctions, the band gap of both components can be controlled by varying the...
journal article 2019
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Grimaldi, G. (author), Crisp, R.W. (author), Ten Brinck, Stephanie (author), Zapata, Felipe (author), van Ouwendorp, M. (author), Renaud, N. (author), Kirkwood, N.R.M. (author), Evers, W.H. (author), Kinge, S.S. (author), Infante, Ivan (author), Siebbeles, L.D.A. (author), Houtepen, A.J. (author)
Thermalization losses limit the photon-to-power conversion of solar cells at the high-energy side of the solar spectrum, as electrons quickly lose their energy relaxing to the band edge. Hot-electron transfer could reduce these losses. Here, we demonstrate fast and efficient hot-electron transfer between lead selenide and cadmium selenide...
journal article 2018
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Crisp, R.W. (author), Grimaldi, G. (author), De Trizio, Luca (author), Evers, W.H. (author), Kirkwood, N.R.M. (author), Kinge, Sachin (author), Manna, L. (author), Siebbeles, L.D.A. (author), Houtepen, A.J. (author)
Indium antimonide (InSb) quantum dots (QDs) have unique and interesting photophysical properties, but widespread experimentation with InSb QDs is lacking due to the difficulty in synthesizing this material. The key experimental challenge in fabricating InSb QDs is preparing a suitable Sb-precursor in the correct oxidation state that reacts...
journal article 2018
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Spoor, F.C.M. (author), Grimaldi, G. (author), Delerue, Christophe (author), Evers, W.H. (author), Crisp, R.W. (author), Geiregat, P.A. (author), Hens, Zeger (author), Houtepen, A.J. (author), Siebbeles, L.D.A. (author)
Carrier multiplication is a process in which one absorbed photon excites two or more electrons. This is of great promise to increase the efficiency of photovoltaic devices. Until now, the factors that determine the onset energy of carrier multiplication have not been convincingly explained. We show experimentally that the onset of carrier...
journal article 2018
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Kirkwood, N.R.M. (author), Monchen, J.O.V. (author), Crisp, R.W. (author), Grimaldi, G. (author), Bergstein, Huub A.C. (author), du Fossé, I. (author), van der Stam, W. (author), Infante, Ivan (author), Houtepen, A.J. (author)
Energy levels in the band gap arising from surface states can dominate the optical and electronic properties of semiconductor nanocrystal quantum dots (QDs). Recent theoretical work has predicted that such trap states in II-VI and III-V QDs arise only from two-coordinated anions on the QD surface, offering the hypothesis that Lewis acid (Z...
journal article 2018
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Crisp, R.W. (author), Kirkwood, N.R.M. (author), Grimaldi, G. (author), Kinge, Sachin (author), Siebbeles, L.D.A. (author), Houtepen, A.J. (author)
InP and InZnP colloidal quantum dots (QDs) are promising materials for application in light-emitting devices, transistors, photovoltaics, and photocatalytic cells. In addition to possessing an appropriate bandgap, high absorption coefficient, and high bulk carrier mobilities, the intrinsic toxicity of InP and InZnP is much lower than for...
journal article 2018
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van der Stam, W. (author), du Fossé, I. (author), Grimaldi, G. (author), Monchen, J.O.V. (author), Kirkwood, Nicholas (author), Houtepen, A.J. (author)
The photoluminescence (PL) quantum yield of semiconductor nanocrystals (NCs) is hampered by in-gap trap states due to dangling orbitals on the surface of the nanocrystals. While crucial for the rational design of nanocrystals, the understanding of the exact origin of trap states remains limited. Here, we treat CdTe nanocrystal films with...
journal article 2018
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