Unraveling electron liberation from Bi²⁺ for designing Bi³⁺-based afterglow phosphor for anti-counterfeiting and flexible X-ray imaging

Rational Design of Afterglow and Storage Phosphors

Vacuum-Referred Binding Energies of Bismuth and Lanthanide Levels in ARE(Si,Ge)O₄ (A = Li, Na; RE = Y, Lu): Toward Designing Charge-Carrier-Trapping Processes for Energy Storage

Towards information storage by designing both electron and hole detrapping processes in bismuth and lanthanide-doped LiRE(Si,Ge)O₄ (RE = Y, Lu) with high charge carrier storage capacity

Designing thermally stimulated 1.06 mu m Nd3+ emission for the second bio-imaging window demonstrated by energy transfer from Bi3+ in La-, Gd-, Y-, and LuPO4

Bi³⁺ acting both as an electron and as a hole trap in La-, Y-, and LuPO₄

Charge carrier trapping processes in lanthanide doped La-, Gd-, Y-, and LuPO4