Search results
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Unraveling electron liberation from Bi2+ for designing Bi3+-based afterglow phosphor for anti-counterfeiting and flexible X-ray imaging
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Rational Design of Afterglow and Storage Phosphors
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Vacuum-Referred Binding Energies of Bismuth and Lanthanide Levels in ARE(Si,Ge)O4 (A = Li, Na; RE = Y, Lu): Toward Designing Charge-Carrier-Trapping Processes for Energy Storage
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Towards information storage by designing both electron and hole detrapping processes in bismuth and lanthanide-doped LiRE(Si,Ge)O4 (RE = Y, Lu) with high charge carrier storage capacity
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Designing thermally stimulated 1.06 mu m Nd3+ emission for the second bio-imaging window demonstrated by energy transfer from Bi3+ in La-, Gd-, Y-, and LuPO4
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Bi3+ acting both as an electron and as a hole trap in La-, Y-, and LuPO4
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Charge carrier trapping processes in lanthanide doped La-, Gd-, Y-, and LuPO4