Unraveling electron liberation from Bi²⁺ for designing Bi³⁺-based afterglow phosphor for anti-counterfeiting and flexible X-ray imaging

It is challenging to rational design persistent luminescence and storage phosphors with high storage capacity of electrons and holes after X-ray charging. Such phosphors have potential applications in anti-counterfeiting and X-ray imaging. Here we have combined vacuum referred binding energy diagram (VRBE) construction, photoluminescence...

Vacuum-Referred Binding Energies of Bismuth and Lanthanide Levels in ARE(Si,Ge)O₄ (A = Li, Na; RE = Y, Lu): Toward Designing Charge-Carrier-Trapping Processes for Energy Storage

Developing a feasible design principle for solid-state materials for persistent luminescence and storage phosphors with high charge carrier storage capacity remains a crucial challenge. Here we report a methodology for such rational design via vacuum referred binding energy (VRBE) diagram aided band structure engineering and crystal synthesis...

Towards information storage by designing both electron and hole detrapping processes in bismuth and lanthanide-doped LiRE(Si,Ge)O₄ (RE = Y, Lu) with high charge carrier storage capacity

Guided by vacuum referred binding energy (VRBE) diagrams, both the trapping and detrapping processes of electrons and holes are explored in the bismuth and lanthanide-doped LiRE(Si,Ge)O₄ (RE = Y, Lu) family of compounds. The Tm³⁺ electron trap has been combined with the deep hole traps of Ln³⁺ (Ln = Ce, Tb, or...

Designing thermally stimulated 1.06 mu m Nd3+ emission for the second bio-imaging window demonstrated by energy transfer from Bi3+ in La-, Gd-, Y-, and LuPO4

We report a general methodology to the rational design of thermally stimulated short-wave infrared (SWIR) luminescence between ∼900 and 1700 nm by a new combination of using efficient energy transfer from Bi ³⁺ to Nd ³⁺ and an adjustable hole trap depth via valence band engineering. Predictions from a vacuum referred...

Bi³⁺ acting both as an electron and as a hole trap in La-, Y-, and LuPO₄

The vacuum referred binding energy (VRBE)-guided design of Bi³⁺-based storage and afterglow materials together with charge carrier trapping processes is explored with a study on bismuth- and lanthanide-doped rare earth ortho-phosphates. By combining Bi³⁺ with the shallow hole trap of Tb³⁺ or Pr³⁺,...

Charge carrier trapping processes in lanthanide doped La-, Gd-, Y-, and LuPO4

Various methods for deliberate design electron and hole trapping materials are explored with a study on double lanthanide doped rare earth ortho phosphates. Cerium acts as recombination center while lanthanide codopants as electron trapping centers in LaPO4:0.005Ce3+,0.005Ln3+. The electron trap depth generated by lanthanide codopants can be...