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Ahn, C.H. (author), Bhattacharya, A. (author), Di Ventra, M. (author), Eckstein, J.N. (author), Frisbie, C.D. (author), Gershenson, M.E. (author), Goldman, A.M. (author), Inoue, I.H. (author), Mannhart, J. (author), Millis, A.J. (author), Morpurgo, A.F. (author), Natelson, D. (author), Triscone, J.M. (author)
Application of the field-effect transistor principle to novel materials to achieve electrostatic doping is a relatively new research area. It may provide the opportunity to bring about modifications of the electronic and magnetic properties of materials through controlled and reversible changes of the carrier concentration without modifying the...
journal article 2006