Searched for: author%3A%22Nanver%2C+L.K.%22
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Sammak, A. (author), Aminian, Mahdi (author), Nanver, L.K. (author), Charbon-Iwasaki-Charbon, E. (author)
Pure gallium and pure boron (PureGaB) Ge-on-Si photodiodes were fabricated in a CMOS compatible process and operated in linear and avalanche mode. Three different pixel geometries with very different area-to-perimeter ratios were investigated in linear arrays of 300 pixels with each a size of 26 × 26 μm2. The processing of anode contacts at the...
journal article 2016
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Sammak, A. (author), Qi, L. (author), Nanver, L.K. (author)
The effectiveness of using nanometer-thin boron (PureB) layers as interdiffusion barrier to aluminum (Al) is studied for a contacting scheme specifically developed for fabricating germanium-on-silicon (Ge-on-Si) p+n photodiodes with an oxide-covered light entrance window. Contacting is achieved at the perimeter of the Ge-island anode directly to...
journal article 2015
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Sammak, A. (author), Aminian, M. (author), Qi, L. (author), De Boer, W.B. (author), Charbon, E. (author), Nanver, L.K. (author)
The selective epitaxial growth of Ge-on-Si followed by in-situ deposition of a nm-thin Ga/B layer stack (PureGaB) has previously been shown to be a robust CMOS-compatible process for fabrication of Ge-on-Si photodiodes. In this paper, strategies to improve the control and reproducibility of PureGaB Ge-on-Si photodiode fabrication by reducing the...
journal article 2014
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Mohammadi, V. (author), De Boer, W.B. (author), Scholtes, T.L.M. (author), Nanver, L.K. (author)
In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of PureB-layers grown by chemical-vapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the diffusion...
journal article 2013
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Mok Kai Rine, C. (author), Vlooswijk, A.H.G. (author), Mohammadi, V. (author), Nanver, L.K. (author)
Chemical-vapor-deposited pure boron (PureB) layers can be used as a source of p-type boron dopants for thermal diffusion into silicon during a drive-in anneal. In this work, the effect of thermally annealing PureB layers is investigated in terms of surface morphology and electrical properties. The presence of a few nanometer-thick PureB layer on...
journal article 2013
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Mohammadi, V. (author), De Boer, W.B. (author), Scholtes, T.L.M. (author), Nanver, L.K. (author)
In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of PureB-layers grown by chemicalvapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the diffusion mechanism...
journal article 2013
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Sammak, A. (author), De Boer, W.B. (author), Nanver, L.K. (author)
A standard Si/SiGe ASM CVD reactor that was recently modified for merging GaAs and Si epitaxial growth in one system is utilized to achieve intrinsic and doped epitaxial Ge-on-Si with low threading dislocation and defect densities. For this purpose, the system is equipped with 2% diluted GeH4 as the main precursor gas for Ge deposition; and 0.7%...
journal article 2012
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Mohammadi, V. (author), De Boer, W.B. (author), Scholtes, T.L.M. (author), Nanver, L.K. (author)
The so-called local-loading effect is studied for pure boron (PureB) depositions from B2H6 in a chemical-vapor deposition (CVD) reactor. This effect occurs because the boron is not deposited on oxide and this increases the deposition rate (DR) of boron in open Si areas in the oxide. Experiments are performed for wide range of local-oxide ratio ...
journal article 2012
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Nanver, L.K. (author), Sammak, A. (author), Mohammadi, V. (author), Mok, K.R.C. (author), Qi, L. (author), Sakic, A. (author), Golshani, N. (author), Darakhshandeh, J. (author), Scholtes, T.M.L. (author), De Boer, W.B. (author)
Envisioning wide future relevance, work is reviewed here on the pure dopant deposition of boron (PureB), gallium (PureGa) and the combination of the two (PureGaB), as used in the fabrication of nanometer shallow p+n Si and/or Ge diodes. Focus is placed on the special properties that have put these diodes in a class apart: their ideal electrical...
journal article 2012
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Mohammadi, V. (author), De Boer, W.B. (author), Nanver, L.K. (author)
In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of pure boron (PureB-) layers grown by chemical-vapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the...
journal article 2012
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Mohammadi, V. (author), De Boer, W.B. (author), Scholtes, T.L.M. (author), Nanver, L.K. (author)
conference paper 2012
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Sammak, A. (author), De Boer, W.B. (author), Nanver, L.K. (author)
conference paper 2012
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Mohammadi, V. (author), De Boer, W.B. (author), Nanver, L.K. (author)
Surface reaction mechanisms are investigated to determine the activation energies of pure boron (PureB) layer deposition at temperatures from 350?°C to 850?°C when using chemical-vapor deposition from diborane in a commercial Si/SiGe epitaxial reactor with either hydrogen or nitrogen as carrier gas. Three distinguishable regions are identified...
journal article 2012
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Mohammadi, V. (author), De Boer, W.B. (author), Scholtes, T.L.M. (author), Nanver, L.K. (author)
The pattern dependency of pure-boron (PureB) layer chemical-vapor Deposition (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and the size of windows to the Si on patterned...
journal article 2012
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Mohammadi, V. (author), De Boer, W.B. (author), Scholtes, T.L.M. (author), Nanver, L.K. (author)
The pattern dependency of pure-boron (PureB) layer chemicalvapor depositions (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and the size of windows to the Si on patterned...
journal article 2012
document
Mok, K.R.C. (author), Naber, R.C.G. (author), Nanver, L.K. (author)
Emitter saturation current densities, Joe have been investigated with different boron implantation dose and annealing conditions. The higher thermal budgets used here are shown experimentally to improve Joe, implying more complete defect dissolution. Simulations show that significant degradation in Joe can be attributed to the presence of...
conference paper 2012
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Mohammadi, V. (author), De Boer, W.B. (author), Scholtes, T.L.M. (author), Nanver, L.K. (author)
conference paper 2012
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Mohammadi, V. (author), De Boer, W.B. (author), Scholtes, T.L.M. (author), Nanver, L.K. (author)
conference paper 2012
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Sakic, A. (author), Scholtes, T.L.M. (author), De Boer, W.B. (author), Golshani, N. (author), Derakhshandeh, J. (author), Nanver, L.K. (author)
An arsenic doping technique for depositing up to 40-?m-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 1011 cm?3, a value that is solely limited by the cleanness of the epitaxial reactor...
journal article 2011
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Sakic, A. (author), Nanver, L.K. (author), van Veen, G. (author), Kooijman, K. (author), Vogelsang, P. (author), Scholtes, T.L.M. (author), De Boer, W. (author), Wien, W.H.A. (author), Milosavljevic, S. (author), Heerkens, C. (author), Knezevic, T. (author), Spee, I. (author)
The low-energy electron detectors presented in this work have near theoretical electron signal gain at low energies measured down to 200 eV and high-speed response due to the following technological steps: (i) chemical vapor deposition (CVD) of boron layers (PureB layers) proven to form an ideal nm-deep p+n junction with the outstanding...
conference paper 2011
Searched for: author%3A%22Nanver%2C+L.K.%22
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