High Efficiency UV Photodiodes fabricated on p-type Substrate

Newly developed “pure-boron” photodiodes, with high sensitivity and stability in the whole ultraviolet range (UV), are described. The main purpose of this work is to create and characterize a large-area UV photodiode, representing a structure of a pixel in a backside illuminated CMOS image sensor, featuring maximum fill factor and hence...

Charge-Transfer CMOS Image Sensors: Device and Radiation Aspects

The aim of this thesis was twofold: investigating the effect of ionizing radiation on 4-T CMOS image sensors and the possibility of realizing a CCD like sensor in standard 0.18-?m CMOS technology (for medical applications). Both the aims are complementary; borrowing and lending many aspects of radiation and device physics amongst each other.