Searched for: author%3A%22Ravichandran%2C+Ashwath%22
(1 - 3 of 3)
de Vrijer, T. (author), Bouazzata, Bilal (author), Ravichandran, Ashwath (author), van Dingen, Julian E.C. (author), Roelandschap, Paul J. (author), Roodenburg, Koos (author), Roerink, Steven J. (author), Saitta, F.S. (author), Blackstone, Thijs (author), Smets, A.H.M. (author)
In this paper the opto-electrical nature of hydrogenated group IV alloys with optical bandgap energies ranging from 1.0 eV up to 2.3 eV are studied. The fundamental physical principles that determine the relation between the bandgap and the structural characteristics such as material density, elemental composition, void fraction and...
journal article 2022
de Vrijer, T. (author), Ravichandran, Ashwath (author), Bouazzata, Bilal (author), Smets, A.H.M. (author)
Low-cost multijunction photovoltaic devices are the next step in the solar energy revolution. Adding a bottom junction with a low bandgap energy material through plasma enhanced chemical vapor deposition (PECVD) processing could potentially provide a low-cost boost in conversion efficiency. A logical candidate for this low bandgap material is...
journal article 2021
Ravichandran, Ashwath (author)
Single junction solar cells have a theoretical efficiency limit of 33.1% due to spectral mismatch. To overcome this, multi-junction devices are generally fabricated with two or more junctions, so as to achieve better energy conversion efficiency by optimum spectral utilization. The c-Si bottom cell of a thin-film Si triple-/quadruple-junction...
master thesis 2020