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An analog to digital converter in a SiC CMOS technology for high-temperature applications

Mo, J. (author), Niu, Yunfan (author), May, Alexander (author), Rommel, Mathias (author), Rossi, Chiara (author), Romijn, J. (author), Zhang, Kouchi (author), Vollebregt, S. (author)

Integrated circuits based on wide bandgap semiconductors are considered an attractive option for meeting the demand for high-temperature electronics. Here, we report an analog-to-digital converter fabricated in a silicon carbide complementary metal-oxide-semiconductor technology now available through Europractice. The MOSFET component in this...

journal article 2024

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A Highly Linear Temperature Sensor Operating up to 600°C in a 4H-SiC CMOS Technology

Mo, J. (author), LI, J. (author), Zhang, Y. (author), Romijn, J. (author), May, Alexander (author), Erlbacher, Tobias (author), Zhang, Kouchi (author), Vollebregt, S. (author)

In this work, a highly linear temperature sensor based on a silicon carbide (SiC) p-n diode is presented. Under a constant current biasing, the diode has an excellent linear response to the temperature (from room temperature to 600°C). The best linearity (coefficient of determination ${R}^{{2}}$ = 99.98%) is achieved when the current density...

journal article 2023

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Design and Characterization of a Data Converter in a SiC CMOS Technology for Harsh Environment Sensing Applications

Niu, Yunfan (author), Mo, J. (author), May, Alexander (author), Rommel, Mathias (author), Rossi, Chiara (author), Romijn, J. (author), Zhang, Kouchi (author), Vollebregt, S. (author)

This work presents the design and characterization of an analog-to-digital converter (ADC) with silicon carbide (SiC) for sensing applications in harsh environments. The SiC-based ADC is implemented with the state-of-the-art low-voltage SiC complementary-metal-oxide-semiconductor (CMOS) technology developed by Fraunhofer IISB. Two types of...

conference paper 2023

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Microfabricated albedo insensitive sun position sensor system in silicon carbide with integrated 3D optics and CMOS electronics

Romijn, J. (author), Vollebregt, S. (author), de Bie, Vincent G. (author), Middelburg, L.M. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Leijtens, J.A.P. (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)

The next generation of satellites will need to tackle tomorrow's challenges for communication, navigation and observation. In order to do so, it is expected that the amount of satellites in orbit will keep increasing, form smart constellations and miniaturize individual satellites to make access to space cost effective. To enable this next...

journal article 2023

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Integrated silicon carbide sun position sensor system-on-chip for space applications

Romijn, J. (author)

doctoral thesis 2022

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Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Romijn, J. (author), Vollebregt, S. (author), Middelburg, L.M. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)

The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a...

journal article 2022

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Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology

Romijn, J. (author), Vollebregt, S. (author), Middelburg, L.M. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Leijtens, Johan (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)

This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm2 chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60 μW, which are...

journal article 2022

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Low Temperature Sapphire to Silicon Flip Chip Interconnects by Copper Nanoparticle Sintering

Ji, X. (author), van Zeijl, H.W. (author), Romijn, J. (author), van Ginkel, H.J. (author), Liu, X. (author), Zhang, Kouchi (author)

The continuous trend to integrate more multi-functions in a package often involves, Heterogeneous Integration of multi-functional blocks in some kind of 3D stacking. The conventional flip chip for die-on-substrate technology applies solder for integration. However, solder joint integration has the disadvantages of restricting height, reflow...

conference paper 2022

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ZnO Nanoparticle Printing for UV Sensor Fabrication

van Ginkel, H.J. (author), Orvietani, M. (author), Romijn, J. (author), Zhang, Kouchi (author), Vollebregt, S. (author)

In this work, a novel microfabrication-compatible production process is demonstrated and used to fabricate UV photoresistors made from ZnO nanoparticles. It comprises a simple room-temperature production method for synthesizing and direct-writing nanoparticles. The method can be used on a wide range of surfaces and print a wide range of...

conference paper 2022

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Visible Blind Quadrant Sun Position Sensor in a Silicon Carbide Technology

Romijn, J. (author), Vollebregt, S. (author), May, Alexander (author), Erlbacher, Tobias (author), van Zeijl, H.W. (author), Leijtens, J.A.P. (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)

In this paper, we present a quadrant sun position sensor microsystem device in a silicon carbide technology that operates in a field-of-view of ±33° and reaches a mean error of 1.9° in this range. This will allow, for the first time, an inherently visible blind sun position sensor in a CMOS compatible technology. Opto-electronic integration of...

conference paper 2022

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Angle Sensitive Optical Sensor for Light Source Tracker Miniaturization

Romijn, J. (author), Sanseven, Seçil (author), Zhang, Kouchi (author), Vollebregt, S. (author), Sarro, Pasqualina M (author)

An angle sensitive optical sensor without conventional optics is presented in this article. The reported device omits the need for adding 3-D optics in postprocessing by monolithic integration of complimentary metal-oxide semiconductor compatible diffraction grating layers, which cuts down the fabrication costs and allows for miniaturization...

journal article 2022

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Multi-layer graphene Pirani pressure sensors

Romijn, J. (author), Dolleman, R.J. (author), Singh, M. (author), van der Zant, H.S.J. (author), Steeneken, P.G. (author), Sarro, Pasqualina M (author), Vollebregt, S. (author)

The operating principle of Pirani pressure sensors is based on the pressure dependence of a suspended strip's electrical conductivity, caused by the thermal conductance of the surrounding gas which changes the Joule heating of the strip. To realize such sensors, not only materials with high temperature dependent electrical conductivity are...

journal article 2021

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Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology

Romijn, J. (author), Middelburg, L.M. (author), Vollebregt, S. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)

Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of...

conference paper 2021

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High Step Coverage Interconnects By Printed Nanoparticles

van Ginkel, H.J. (author), Romijn, J. (author), Vollebregt, S. (author), Zhang, Kouchi (author)

The growing diversity in the used materials in semiconductor packaging provides challenges for achieving good interconnection. Particularly the very soft substrates, such as paper and polymers, and very hard, such as silicon carbide, offer unique challenges to wire-bonding or formation of vertical interconnects. Complementary technologies are...

conference paper 2021

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Towards a Scalable Sun Position Sensor with Monolithic Integration of the 3d Optics for Miniaturized Satellite Attitude Control

Romijn, J. (author), Vollebregt, S. (author), van Zeijl, H.W. (author), Zhang, Kouchi (author), Leijtens, Johan (author), Sarro, Pasqualina M (author)

In this paper we present a sun position sensor platform with a scalable approach for the 3D integration of the sensor optics. This would facilitate the sun position sensor miniaturization, reduces fabrication cost and mitigates the need for sensor calibration. The sun position sensor platform is implemented in a seven mask BICMOS technology with...

conference paper 2021

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A Wafer-Scale Process for the Monolithic Integration of CVD Graphene and CMOS Logic for Smart MEMS/NEMS Sensors

Romijn, J. (author), Vollebregt, S. (author), van Zeijl, H.W. (author), Sarro, Pasqualina M (author)

In this paper we present, for the first time, the successful monolithic wafer-scale integration of CVD graphene with CMOS logic for highly miniaturized smart sensing structures with on-chip readout electronics. The use of a patterned CMOS compatible catalyst for pre-defined regions of CVD graphene growth, and the transfer-free process used,...

conference paper 2019

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A transfer-free approach to wafer-scale graphene deposited by chemical vapour deposition

Vollebregt, S. (author), Ricciardella, F. (author), Romijn, J. (author), Singh, M. (author), Shi, Shengtai (author), Sarro, Pasqualina M (author)

abstract 2018

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A miniaturized low power Pirani pressure sensor based on suspended graphene

Romijn, J. (author), Vollebregt, S. (author), Dolleman, R.J. (author), Singh, M. (author), van der Zant, H.S.J. (author), Steeneken, P.G. (author), Sarro, Pasqualina M (author)

Worlds first graphene-based Pirani pressure sensor is presented. Due to the decreased area and low thickness, the graphene-based Pirani pressure sensor allows for low power applications down to 0.9 mW. Using an innovative, transfer-free process, suspended graphene beams are realized. This allows for up to 100x miniaturization of the pressure...

conference paper 2018

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Epitaxial growth of a colloidal hard-sphere hcp crystal and the effects of epitaxial mismatch on crystal structure

Hoogenboom, J.P. (author), van Langen-Suurling, A.K. (author), Romijn, J. (author), van Blaaderen, A. (author)

journal article 2004

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Hard-Sphere Crystals with hcp and Non-Close-Packed Structure Grown by Colloidal Epitaxy

Hoogenboom, J.P. (author), van Langen-Suurling, A.K. (author), Romijn, J. (author), van Blaaderen, A. (author)

journal article 2003