The extraordinary role of the AlN interlayer in growth of AlN sputtered on Ti electrodes

The structure of AlN layers grown on Ti with and without an AlN interlayer between the Si substrate and the Ti layer is investigated. The AlN grains take over the orientation of the Ti columnar grains in both cases. Surprisingly, the Ti grains do not take over completely the orientations of the AlN grains of the interlayer, and show the same...

Homogeneous superconducting phase in TiN film: A complex impedance study

The low frequency complex impedance of a high resistivity 92?????cm and 100?nm thick TiN superconducting film has been measured via the transmission of several high sensitivity GHz microresonators, down to TC/50. The temperature dependence of the kinetic inductance follows closely BCS local electrodynamics, with one well defined superconducting...

Enhancement of AlN Slender Piezoelectric Cantilevers Actuation by PECVD Silicon Nitride Coating

Actuation enhancement for AlN piezoelectric cantilevers is achieved by coating slender AlN beams with a thin PECVD silicon nitride (SiN) layer. Very good linearity and high deflection, up to 19 nm/V of actuation deflection for 200 ?m long cantilevers, at quasi-static mode, is obtained for a 500 nm SiN top layer. This value is three times larger...

Fabrication of AlN slender piezoelectric cantilevers for highspeed MEMS actuations

Very thin piezoelectric cantilevers based on AlN layers using titanium Ti thin film electrodes are fabricated and characterized. By optimizing the Ti sputtering parameters, a very low stress (156 MPa) layers stack with high crystallinity and strong (002) orientation of the AlN films is obtained. Finally, a simple fabrication process, fully CMOS...

Single-grain Si TFTs for high-speed flexible electronics

Existent flat-panel display is mechanically stiff because it requires external connection of IC chips. At its present stage, displays with a-Si, metal oxide semiconductor or organic TFTs require still external connection of data driver and controllers, because of their low carrier mobilities. We will review our recent progress on direct...

Influence of seed layer on crystallinity and orientation of pulsed — DC sputtered AlN thin-films for piezoelectric actuators

Aluminum Nitride thin films with the desired properties for piezoelectric actuators are grown by pulsed DC sputtering on Si (100) substrates coated with different seed layers (Al/1%Si, Mo, Ti). The influence of sputtering parameters and the seed layers on crystallinity and orientation of the AlN films is investigated. Raman spectroscopy...

Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and A1N Cooling

This paper reviews special RF/microwave silicon device implementations in a process that allows two-sided contacting of the devices: the back-wafer contacted silicon-on-glass (SOG) substrate-transfer technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the...

A 67 dBm OIP3 Multistacked Junction Varactor

Magnetic-Multilayered Interconnects Featuring Skin Effect Suppression

A novel concept for a high-frequency, low-loss interconnect with significant skin effect suppression over a wide frequency band is presented. The concept is based on a multilayer comprising thin magnetic (Ni80Fe20) and metal (Cu) layers. The negative permeability of the magnetic layers leads to a nearcancellation of the overall permeability of...

High-resistivity nanogranular Co–Al–O films for high-frequency applications

This work presents a series of high-resistivity nanogranular Co–Al–O films with maximum resistivity of ? 110?m??cm. The films were deposited using pulsed dc reactive sputtering of a Co72Al28 target in an oxygen/argon ambient. The samples were characterized by scanning electron microscopy (SEM), M-H loop measurements, and s-parameter measurements...

Material-Inversion Solid-Phase Epitaxy of p+ Si for Elevated Junctions

A solid-phase epitaxy (SPE) process that forms ultra-shallow abrupt aluminum p+-doped Si islands has been studied for deposition temperatures from 400 to 500 ºC. The growth process gives a very uniform composition of the p+ layer and an abrupt doping transition to the Si substrate. Low ohmic contacting and near-ideal diode characteristics are...

Material-Inversion Solid-Phase Epitaxy of p+ Si forElevated Junctions

Sub-500/spl deg/C solid-phase epitaxy of ultra-abrupt p/sup +/-silicon elevated contacts and diodes

Silicon micromachining of high aspect ratio, high-density through-wafer electrical interconnects for 3-D multichip packaging

RF power silicon-on-glass VDMOSFETs

Saddle add-on metallization for RF-IC technology

Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors

A back-wafer contacted silicon-on-glass integrated bipolar process. Part I. The conflict electrical versus thermal isolation