Searched for: author:"Stassen, A.F."
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De Boer, R.W.I. (author), Stassen, A.F. (author), Craciun, M.F. (author), Mulder, C.L. (author), Molinari, A. (author), Rogge, S. (author), Morpurgo, A.F. (author)
We report the observation of ambipolar transport in field-effect transistors fabricated on single crystals of copper- and iron-phthalocyanine, using gold as a high work-function metal for the fabrication of source and drain electrodes. In these devices, the room-temperature mobility of holes reaches 0.3?cm2/V?s in both materials. The highest...
journal article 2005
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De Boer, R.W.I. (author), Iosad, N.N. (author), Stassen, A.F. (author), Klapwijk, T.M. (author), Morpurgo, A.F. (author)
We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used, leakage current flowing through the gate insulator results in an irreversible degradation of the single...
journal article 2005
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Stassen, A.F. (author), De Boer, R.W.I. (author), Iosad, N.N. (author), Morpurgo, A.F. (author)
We have performed a comparative study of rubrene single-crystal field-effect transistors fabricated using different materials as gate insulator. For all materials, highly reproducible device characteristics are obtained. The achieved reproducibility permits one to observe that the mobility of the charge carriers systematically decreases with...
journal article 2004