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Xun, H. (author), Fieback, M. (author), Yuan, S. (author), Aziza, Hassen (author), Heidekamp, Mathijs (author), Copetti, Thiago (author), Poehls, Leticia Bolzani (author), Taouil, M. (author), Hamdioui, S. (author)Resistive Random Access Memories (RRAMs) are being commercialized with significant investment from several semiconductor companies. In order to provide efficient and high-quality test solutions to push high-volume production, a comprehensive understanding of manufacturing defects is significantly required. This paper identifies and characterizes...conference paper 2023
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Xun, H. (author), Fieback, M. (author), Yuan, S. (author), Zhang, Ziwei (author), Taouil, M. (author), Hamdioui, S. (author)Resistive Random Access Memory (RRAM) is a potential technology to replace conventional memories by providing low power consumption and high-density storage. As various manufacturing vendors make significant efforts to push it to high-volume production and commercialization, high-quality and efficient test solutions are of great importance. This...conference paper 2023
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Yuan, S. (author), Taouil, M. (author), Fieback, M. (author), Xun, H. (author), Marinissen, Erik Jan (author), Kar, Gouri Sankar (author), Rao, Sidharth (author), Couet, Sebastien (author), Hamdioui, S. (author)The development of Spin-transfer torque magnetic RAM (STT-MRAM) mass production requires high-quality dedicated test solutions, for which understanding and modeling of manufacturing defects of the magnetic tunnel junction (MTJ) is crucial. This paper introduces and characterizes a new defect called Back-Hopping (BH); it also provides its...conference paper 2023
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Fieback, M. (author), Bradarić, Filip (author), Taouil, M. (author), Hamdioui, S. (author)Resistive Random Access Memory (RRAM, or ReRAM) is a promising memory technology to replace Flash because of its low power consumption, high storage density, and simple integration in existing IC production processes. This has motivated many companies to invest in this technology. However, RRAM manufacturing introduces new failure mechanisms and...conference paper 2023
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Gomony, Manil Dev (author), Gebregiorgis, A.B. (author), Fieback, M. (author), Geilen, Marc (author), Stuijk, Sander (author), Richter-Brockmann, Jan (author), Bishnoi, R.K. (author), Taouil, M. (author), Hamdioui, S. (author)This paper addresses one of the directions of the HORIZON EU CONVOLVE project being dependability of smart edge processors based on computation-in-memory and emerging memristor devices such as RRAM. It discusses how how this alternative computing paradigm will change the way we used to do manufacturing test. In addition, it describes how these...conference paper 2023
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Ghasempouri, Tara (author), Raik, Jaan (author), Reinbrecht, Cezar (author), Hamdioui, S. (author), Taouil, M. (author)According to the World Economic Forum, cyberattacks are considered as one of the most important sources of risk to companies and institutions worldwide. Attacks can target the network, software, and/or hardware. Over the years, much knowledge has been developed to understand and mitigate cyberattacks. However, new threats have appeared in...journal article 2023
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Köylü, T.C. (author), Reinbrecht, Cezar (author), Gebregiorgis, A.B. (author), Hamdioui, S. (author), Taouil, M. (author)Hardware security is currently a very influential domain, where each year countless works are published concerning attacks against hardware and countermeasures. A significant number of them use machine learning, which is proven to be very effective in other domains. This survey, as one of the early attempts, presents the usage of machine...journal article 2023
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Masoumian, S. (author), Maes, Roel (author), Wang, Rui (author), Yerriswamy, Karthik Keni (author), Schrijen, Geert-Jan (author), Hamdioui, S. (author), Taouil, M. (author)SRAM Physical Unclonable Functions (PUFs) are one of the popular forms of PUFs that can be used to generate unique identifiers and randomness for security purposes. Hence, their resilience to attacks is crucial. The probability of attacks increases when the SRAM PUF start-up values follow a predictable pattern which we refer to as bias. In this...conference paper 2023
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Fieback, M. (author), Cardoso Medeiros, G. (author), Wu, L. (author), Aziza, Hassen (author), Bishnoi, R.K. (author), Taouil, M. (author), Hamdioui, S. (author)Resistive RAM (RRAM) is a promising technology to replace traditional technologies such as Flash, because of its low energy consumption, CMOS compatibility, and high density. Many companies are prototyping this technology to validate its potential. Bringing this technology to the market requires high-quality tests to ensure customer...journal article 2022
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Köylü, T.C. (author), Reinbrecht, Cezar (author), Brandalero, Marcelo (author), Hamdioui, S. (author), Taouil, M. (author)Fault injection attacks are a threat to all digital systems, especially to the ones conducting security sensitive operations. Recently, the strategy of observing the instruction flow to detect attacks has gained popularity. In this paper, we provide a comparative study between three hardware-based techniques (i.e., recurrent neural network (RNN)...journal article 2022
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Wu, L. (author), Rao, Siddharth (author), Taouil, M. (author), Marinissen, Erik Jan (author), Kar, Gouri Sankar (author), Hamdioui, S. (author)The manufacturing process of STT-MRAM requires unique steps to fabricate and integrate magnetic tunnel junction (MTJ) devices which are data-storing elements. Thus, understanding the defects in MTJs and their faulty behaviors are paramount for developing high-quality test solutions. This article applies the advanced device-aware test to...journal article 2022
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Majzoub, Sohaib (author), Saleh, Resve A. (author), Taouil, M. (author), Hamdioui, S. (author), Bamakhrama, Mohamed (author)Design-space exploration for low-power manycore design is a daunting and time-consuming task which requires some complex tools and frameworks to achieve. In the presence of process variation, the problem becomes even more challenging, especially the time associated with trial-and-error selection of the proper options in the tools to obtain the...journal article 2022
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Fieback, M. (author), Taouil, M. (author), Hamdioui, S. (author)Testing of Computation-in-Memory (CIM) designs based on emerging non-volatile memory technologies, such as resistive RAM (RRAM), is fundamentally different from testing traditional memories. Such designs allow not only for data storage (i.e., memory configuration) but also for the execution of logical and arithmetic operations (i.e., computing...conference paper 2022
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Cem Gursoy, Cemil (author), Kraak, D.H.P. (author), Ahmed, Foisal (author), Taouil, M. (author), Jenihhin, Maksim (author), Hamdioui, S. (author)Memory designs require timing margins to compensate for aging and fabrication process variations. With technology downscaling, aging mechanisms became more apparent, and larger margins are considered necessary. This, in return, means a larger area requirement and lower performance for the memory. Bias Temperature Instability (BTI) is one of the...conference paper 2022
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Cardoso Medeiros, G. (author), Fieback, M. (author), Gebregiorgis, A.B. (author), Taouil, M. (author), Poehls, L. B. (author), Hamdioui, S. (author)High-quality memory diagnosis methodologies are critical enablers for scaled memory devices as they reduce time to market and provide valuable information regarding test escapes and customer returns. This paper presents an efficient Hierarchical Memory Diagnosis (HMD) approach that accurately diagnoses faults in the entire memory. Faults are...conference paper 2022
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Köylü, T.C. (author), Fieback, M. (author), Hamdioui, S. (author), Taouil, M. (author)Fault injection attacks pose an important threat to security-sensitive applications, such as secure communication and storage. By injecting faults into instructions, an attacker can cause information leakage or denial-of-service. Hence, it is important to secure the sensitive parts not only by detecting faults in the executed instructions but...conference paper 2022
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Wu, Lizhou (author), Rao, Siddharth (author), Taouil, M. (author), Marinissen, Erik Jan (author), Kar, Gouri Sankar (author), Hamdioui, S. (author)The popularity of perpendicular magnetic tunnel junction (pMTJ)-based spin-transfer torque magnetic random access memories (STT-MRAMs) is growing very fast. The performance of such memories is very sensitive to magnetic fields, including both internal and external ones. This article presents a magnetic-field-aware compact model of pMTJ, named...journal article 2022
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Masoumian, S. (author), Selimis, Georgios (author), Wang, Rui (author), Schrijen, Geert-Jan (author), Hamdioui, S. (author), Taouil, M. (author)SRAM Physical Unclonable Functions (PUFs) are among other things today commercially used for secure primitives such as key generation and authentication. The quality of the PUFs and hence the security primitives, depends on intrinsic variations which are technology dependent. Therefore, to sustain the commercial usage of PUFs for cutting-edge...conference paper 2022
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Köylü, T.C. (author), Hamdioui, S. (author), Taouil, M. (author)Artificial neural networks (ANNs) are used to accomplish a variety of tasks, including safety critical ones. Hence, it is important to protect them against faults that can influence decisions during operation. In this paper, we propose smart and low-cost redundancy schemes that protect the most vulnerable ANN parts against fault attacks....conference paper 2022
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Fieback, M. (author), Münch, Christopher (author), Gebregiorgis, A.B. (author), Cardoso Medeiros, G. (author), Taouil, M. (author), Hamdioui, S. (author), Tahoori, Mehdi (author)Emerging non-volatile resistive memories like Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) and Resistive RAM (RRAM) are in the focus of today’s research. They offer promising alternative computing architectures such as computation-in-memory (CiM) to reduce the transfer overhead between CPU and memory, usually referred to as the...conference paper 2022