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Johnson, B.C. (author), Tettamanzi, G.C. (author), Yang, C. (author), Alves, A.D.C. (author), Van Donkelaar, J. (author), Thompson, S. (author), Verduijn, J. (author), Mol, J.A. (author), Wacquez, R. (author), Vinet, M. (author), Dzurak, A.S. (author), Sanquer, M. (author), Rogge, S. (author), Jamieson, D.N. (author)Deterministic doping is crucial for overcoming dopant number variability in present nano-scale devices and for exploiting single atom degrees of freedom. The development of determinisitic doping schemes is required. Here, two approaches to the detection of single ion impact events in Si-based devices are reviewed. The first is via specialized...journal article 2010
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- Johnson, B.C. (author), Alves, A. (author), Van Donkelaar, J. (author), Thompson, S. (author), Yang, C. (author), Jamieson, D. (author), Verduijn, A. (author), Mol, J. (author), Tettamanzi, G. (author), Rogge, S. (author), Wacquez, R. (author), Vinet, M. (author), Dzurak, A. (author) journal article 2010
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Johnson, B.C. (author), Tettamanzi, G.C. (author), Alves, A.D.C. (author), Thompson, S. (author), Yang, C. (author), Verduijn, J. (author), Mol, J.A. (author), Wacquez, R. (author), Vinet, M. (author), Sanquer, M. (author), Rogge, S. (author), Jamieson, D.N. (author)We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single...journal article 2010