The extraordinary role of the AlN interlayer in growth of AlN sputtered on Ti electrodes

The structure of AlN layers grown on Ti with and without an AlN interlayer between the Si substrate and the Ti layer is investigated. The AlN grains take over the orientation of the Ti columnar grains in both cases. Surprisingly, the Ti grains do not take over completely the orientations of the AlN grains of the interlayer, and show the same...

Wafer-level assembly and sealing of a MEMS nanoreactor for in situ microscopy

This paper presents a new process for the fabrication of MEMS-based nanoreactors for in situ atomic-scale imaging of nanoparticles under relevant industrial conditions. The fabrication of the device is completed fully at wafer level in an ISO 5 clean room and it is based on silicon fusion bonding and thin film encapsulation for sealed lateral...