Bond Wire Damage Detection Method on Discrete MOSFETs Based on Two-Port Network Measurement

Bond wire damage is one of the most common failure modes of metal-oxide semiconductor field-effect transistor (MOSFET) power devices in wire-welded packaging. This paper proposes a novel bond wire damage detection approach based on two-port network measurement by identifying the MOSFET source parasitic inductance (LS). Numerical calculation...

Failure quantitative assessment approach to MOSFET power device by detecting parasitic parameters

With the emerging wide bandgap (WBG) semiconductor development, the increasing power density and efficiency of power electronic converters may cause more switching oscillation, electromagnetic interference noise, and additional power loss, further increasing the probability of device failure. Therefore, determining and quantifying the failure...

Influence of Pressure on the Mechanical and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals

The mechanical and electronic properties of two GaN crystals, wurtzite and zinc-blende GaN, under various hydrostatic pressures were investigated using first principles calculations. The results show that the lattice constants of the two GaN crystals calculated in this study are close to previous experimental results, and the two GaN crystals...

A CMOS-Compatible Hybrid Plasmonic Slot Waveguide With Enhanced Field Confinement

The emerging field of nanophotonics requires plasmonic devices to be fully compatible with semiconductor fabrication techniques. However, very few feasible practical structures exist at present. Here, we propose a CMOS-compatible hybrid plasmonic slot waveguide (HPSW) with enhanced field confinement. Our simulation results show that the HPSW...