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Yan, F. (author), Migliorato, P. (author), Hong, Y. (author), Rana, V. (author), Ishihara, R. (author), Hiroshima, Y. (author), Abe, D. (author), Inoue, S. (author), Shimoda, T. (author)
The transient drain current of the single-grain silicon thin-film transistor with gate oxide deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition has been measured by applying a square signal on the gate and a constant low voltage between source and drain. Switch-on undershoot current has been observed, which can...
journal article 2005