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document
Yan, F. (author), Migliorato, P. (author), Ishihara, R. (author)
The influence of twin boundaries on the characteristics of single grain-silicon thin film transistors has been analyzed by three-dimensional simulation. The simulations show that the orientation and the location of a twin boundary could affect the field-effect mobility and the leakage current of a device. The field-effect mobility increases with...
journal article 2007
document
Yan, F. (author), Migliorato, P. (author), Ishihara, R. (author)
The transient properties of single grain–thin film transistors (SG-TFTs) with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient and ac measurements show that the response of some...
journal article 2006