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Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author)
We have measured electrical transport across epitaxial, nanometer-sized metal–semiconductor interfaces by contacting CoSi2 islands grown on Si(111) with the tip of a scanning tunneling microscope. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be ? 104 times larger...
journal article 2002
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Shastin, V.N. (author), Zhukavin, R.K. (author), Orlova, E.E. (author), Pavlov, S.G. (author), Rümmeli, M.H. (author), Hübers, H.W. (author), Hovenier, J.N. (author), Klaassen, T.O. (author), Riemann, H. (author), Bradley, I.V. (author), Van der Meer, A.F.G. (author)
Frequency-tunable radiation from the free electron laser FELIX was used to excite neutral phosphorus and bismuth donors embedded in bulk monocrystalline silicon. Lasing at terahertz frequencies has been observed at liquid helium temperature while resonant pumping of odd parity impurity states. The threshold was about two orders of magnitude...
journal article 2002
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De Lima Monteiro, D.W. (author)
This thesis addresses the design, implementation and performance of an integrated Hartmann-Shack wavefront sensor suitable for real-time operation and compatible with a standard technology. A wavefront sensor can be used for the detection of distortions in the profile of a light beam or of an optical component.With such a sensor, one can, for...
doctoral thesis 2002
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Khan, R.U.A. (author), Silva, S.R.P. (author), Van Swaaij, R.A.C.M.M. (author)
Amorphous carbon (a-C) has been shown to be intrinsically p-type, and polymeric a-C (PAC) possesses a wide Tauc band gap of 2.6 eV. We have replaced the p-type amorphous silicon carbide layer of a standard amorphous silicon solar cell with an intrinsic ultrathin layer of PAC. The thickness of the p layer had to be reduced from 9 to 2.5 nm in...
journal article 2003
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Mans, A. (author)
Epitaxial films that are only several atoms layers thick exhibit interesting properties associated with quantum confinement. The electrons form standing waves, just like a violin string, clamped at both ends. In ultrathin lead films, this so-called `quantum size effect' (QSE) alters the physical properties of the film (such as the resistivity,...
doctoral thesis 2005
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Kessels, M.J.H. (author), Bijkerk, F. (author), Tichelaar, F.D. (author), Verhoeven, J. (author)
We developed and demonstrate an analysis method in which we calibrate the intensity scale of cross-sectional transmission electron microscopy (TEM) using Cu K? reflectometry. This results in quantitative in-depth density profiles of multilayer structures. Only three free parameters are needed to obtain the calibrated profiles, corresponding to...
journal article 2005
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Yan, F. (author), Migliorato, P. (author), Ishihara, R. (author)
The transient properties of single grain–thin film transistors (SG-TFTs) with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient and ac measurements show that the response of some...
journal article 2006
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Klaver, A. (author), Nádaždy, V. (author), Zeman, M. (author), Swaaiij, R.A.C.M.M. (author)
We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the defect-state density increased. A similar...
journal article 2006
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He, M. (author), Ishihara, R. (author), Metselaar, W. (author), Beenakker, K. (author)
Strong preference for (100) surface and in-plane orientations has been observed in polycrystalline silicon film on SiO2 after crystallization with multiple excimer laser pulses. Laser induced periodic surface structure (LIPSS) is developed in the film, constructing self-assembled square-shaped grains. The clear texture can be observed in a...
journal article 2006
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Fischer, A.C. (author), Steinebach, O.M. (author), Timmermans, K.R. (author), Wolterbeek, H.T. (author)
journal article 2007
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Sellier, H. (author), Lansbergen, G.P. (author), Caro, J. (author), Rogge, S. (author), Collaert, N. (author), Ferain, I. (author), Jurczak, M. (author), Biesemans, S. (author)
The authors investigate the subthreshold behavior of triple-gate silicon field-effect transistors by low-temperature transport experiments. These three-dimensional nanoscale devices consist of a lithographically defined silicon nanowire surrounded by a gate with an active region as small as a few tens of nanometers down to 50×60×35?nm3....
journal article 2007
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Lazic, I. (author), Ikonic, Z. (author), Milanovic, V. (author), Kelsall, R.W. (author), Indjin, D. (author), Harrison, P. (author)
An electron transport model in n-Si/SiGe quantum cascade or superlattice structures is described. The model uses the electronic structure calculated within the effective-mass complex-energy framework, separately for perpendicular (Xz) and in-plane (Xxy) valleys, the degeneracy of which is lifted by strain, and additionally by size quantization....
journal article 2007
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Lau, G.K. (author), Goosen, J.F.L. (author), Van Keulen, F. (author), Chu Duc, T. (author), Sarro, P.M. (author)
A powerful and effective design of a polymeric thermal microactuator is presented. The design has SU-8 epoxy layers filled and bonded in a meandering silicon (Si) microstructure. The silicon microstructure reinforces the SU-8 layers by lateral restraint. It also improves the transverse thermal expansion coefficient and heat transfer for the...
journal article 2007
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Yan, B. (author), Pham, H.T.M. (author), Ma, Y. (author), Zhuang, Y. (author), Sarro, P.M. (author)
The authors demonstrate a method for the fabrication of in situ ultrathin porous anodic aluminum oxide layers (aspect ratio<2:1) on Si, which can be directly used as templates for nanodot preparation and for pattern transfer. The regular shape of the aluminum oxide pores is maintained even when the thickness of the aluminum oxide template is...
journal article 2007
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Yan, F. (author), Migliorato, P. (author), Ishihara, R. (author)
The influence of twin boundaries on the characteristics of single grain-silicon thin film transistors has been analyzed by three-dimensional simulation. The simulations show that the orientation and the location of a twin boundary could affect the field-effect mobility and the leakage current of a device. The field-effect mobility increases with...
journal article 2007
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Zhukavin, R.K. (author), Shastin, V.N. (author), Pavlov, S.G. (author), Hübers, H.W. (author), Hovenier, J.N. (author), Klaassen, T.O. (author), Van der Meer, A.F.G. (author)
Small signal gain measurements of optically excited terahertz silicon lasers are reported. Two types of lasers, Si:P and Si:Bi, were investigated. They were optically excited with radiation from a free electron laser or a CO2 laser. The experiments were performed with an oscillator-amplifier scheme where one sample serves as a laser while the...
journal article 2007
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Kalmanovitz, N.R. (author), Hoxha, I. (author), Jin, Y. (author), Vitkalov, S.A. (author), Sarachik, M.P. (author), Larkin, I.A. (author), Klapwijk, T.M. (author)
journal article 2008
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Civale, Y. (author), Nanver, L.K. (author), Alberici, S.G. (author), Gammon, A. (author), Kelly, I. (author)
A procedure has been implemented for a quantitative aluminum-doping profiling of µm-scale aluminum-induced solid-phase-epitaxy (SPE) Si islands formed at 400°C. The aluminum concentration was measured to be 1–2×1019 cm?3, which is about 10 times higher than previously reported electrical activation levels. The elemental concentration was...
journal article 2008
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Pavlov, S.G. (author), Hübers, H.W. (author), Böttger, U. (author), Zhukavin, R.K. (author), Shastin, V.N. (author), Hovenier, J.N. (author), Redlich, B. (author), Abrosimov, N.V. (author), Riemann, H. (author)
Raman-type stimulated emission at frequencies between 5.0 and 5.2?THz as well as between 6.1 and 6.4?THz has been realized in silicon crystals doped by phosphorus donors. The Raman laser operates at around 5?K under optical excitation by a pulsed, frequency-tunable infrared free electron laser. The frequencies of the observed laser emission are...
journal article 2008
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Brasser, H.J. (author), Krijger, G.C. (author), Wolterbeek, H.T. (author)
Silicon is involved in numerous important structural and functional roles in a wide range of organisms, including diatoms, plants, and humans, but clear mechanisms have been discovered only in diatoms and sponges. Silicate availability influences metal concentrations within various cell- and tissue-types, but a mechanism has not been discovered...
journal article 2008
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