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Seshan, V. (author), Ullien, D. (author), Castellanos-Gomez, A. (author), Sachdeva, S. (author), Murthy, D.H.K. (author), Savenije, T.J. (author), Ahmad, H.A. (author), Nunney, T.S. (author), Janssens, S.D. (author), Haenen, K. (author), Nesládek, M. (author), Van der Zant, H.S.J. (author), Sudhölter, E.J.R. (author), De Smet, L.C.P.M. (author)
A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ?50 ml/min (STP) at ?850?°C. The films were extensively evaluated by...
journal article 2013
document
Wank, M.A. (author), Van Swaaij, R.A.C.M.M. (author), Van de Sanden, M.C.M. (author)
The surface roughness evolution of hydrogenated amorphous silicon (a-Si:H) films has been studied using in situ spectroscopic ellipsometry for a temperature range of 150–400?°C. The effect of external rf substrate biasing on the coalescence phase is discussed and a removal/densification of a hydrogen-rich layer is suggested to explain the...
journal article 2009