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Mok, K.R.C. (author), Naber, R.C.G. (author), Nanver, L.K. (author)
Emitter saturation current densities, Joe have been investigated with different boron implantation dose and annealing conditions. The higher thermal budgets used here are shown experimentally to improve Joe, implying more complete defect dissolution. Simulations show that significant degradation in Joe can be attributed to the presence of...
conference paper 2012
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De Rooij-Lohmann, V.I.T.A. (author), Veldhuizen, L.W. (author), Zoethout, E. (author), Yakshin, A.E. (author), Van de Kruijs, R.W.E. (author), Thijsse, B.J. (author), Gorgoi, M. (author), Schäfers, F. (author), Bijkerk, F. (author)
To enhance the thermal stability, B4C diffusion barrier layers are often added to Mo/Si multilayer structures for extreme ultraviolet optics. Knowledge about the chemical interaction between B4C and Mo or Si, however is largely lacking. Therefore, the chemical processes during annealing up to 600?°C of a Mo/B4C/Si layered structure have been...
journal article 2010