Searched for: collection%3Air
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Civale, Y. (author), Nanver, L.K. (author), Alberici, S.G. (author), Gammon, A. (author), Kelly, I. (author)
A procedure has been implemented for a quantitative aluminum-doping profiling of µm-scale aluminum-induced solid-phase-epitaxy (SPE) Si islands formed at 400°C. The aluminum concentration was measured to be 1–2×1019 cm?3, which is about 10 times higher than previously reported electrical activation levels. The elemental concentration was...
journal article 2008
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Weis, C.D. (author), Schuh, A. (author), Batra, A. (author), Persaud, A. (author), Rangelow, I.W. (author), Bokor, J. (author), Lo, C.C. (author), Cabrini, S. (author), Sideras-Haddad, E. (author), Fuchs, G.D. (author), Hanson, R. (author), Awschalom, D.D. (author), Schenkel, T. (author)
The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species, and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which function is based on the manipulation of quantum states in single atoms, such as proposed quantum computers....
journal article 2008
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Miwa, J.A. (author), Mol, J.A. (author), Salfi, J. (author), Rogge, S. (author), Simmons, M.Y. (author)
Single phosphorus donors in silicon are promising candidates as qubits in the solid state. Here, we present low temperature scanning probe microscopy and spectroscopy measurements of individual phosphorus dopants deliberately placed in p-type silicon ?1?nm below the surface. The ability to image individual dopants combined with scanning...
journal article 2013