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Dogan, I. (author), Kramer, N.J. (author), Westermann, R.H.J. (author), Dohnalova, K. (author), Smets, A.H.M. (author), Verheijen, M.A. (author), Greogorkiewicz, T. (author), Van de Sanden, M.C.M. (author)We demonstrate a method for synthesizing free standing silicon nanocrystals in an argon/silane gas mixture by using a remote expanding thermal plasma. Transmission electron microscopy and Raman spectroscopy measurements reveal that the distribution has a bimodal shape consisting of two distinct groups of small and large silicon nanocrystals with...journal article 2013
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Kessels, M.J.H. (author), Bijkerk, F. (author), Tichelaar, F.D. (author), Verhoeven, J. (author)We developed and demonstrate an analysis method in which we calibrate the intensity scale of cross-sectional transmission electron microscopy (TEM) using Cu K? reflectometry. This results in quantitative in-depth density profiles of multilayer structures. Only three free parameters are needed to obtain the calibrated profiles, corresponding to...journal article 2005
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Oliviero, E. (author), David, M.L. (author), Beaufort, M.F. (author), Barbot, J.F. (author), Van Veen, A. (author)He+ ions were implanted into silicon with a fluence of 5×10 16?cm?2 at different temperatures ranging from 473 to 1073 K. Samples were analyzed by thermal helium desorption spectroscopy and by transmission electron microscopy. As far as cavity formation is concerned, the behavior can be divided into three stages depending on the implantation...journal article 2002