Searched for: collection%3Air
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document
Gao, J.R. (author), Hajenius, M. (author), Tichelaar, F.D. (author), Klapwijk, T.M. (author), Voronov, B. (author), Grishin, E. (author), Gol'tsman, G. (author), Zorman, C.A. (author), Mehregany, M. (author)
The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800?°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4...
journal article 2007
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Kooi, J.W. (author), Baselmans, J.J.A. (author), Hajenius, M. (author), Gao, J.R. (author), Klapwijk, T.M. (author), Dieleman, P. (author), Baryshev, A. (author), De Lange, G. (author)
The intermediate frequency (IF) characteristics, the frequency dependent IF impedance, and the mixer conversion gain of a small area hot electron bolometer (HEB) have been measured and modeled. The device used is a twin slot antenna coupled NbN HEB mixer with a bridge area of 1×0.15??m2, and a critical temperature of 8.3?K. In the experiment the...
journal article 2007
document
Barends, R. (author), Hajenius, M. (author), Gao, J.R. (author), Klapwijk, T.M. (author)
We present a description of the current-voltage characteristics of hot electron bolometers in terms of the current-dependent intrinsic resistive transition of NbN films. We find that, by including this current dependence, we can correctly predict the complete current-voltage characteristics, showing excellent agreement with measurements for both...
journal article 2005