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Barends, R. (author), Hajenius, M. (author), Gao, J.R. (author), Klapwijk, T.M. (author)We present a description of the current-voltage characteristics of hot electron bolometers in terms of the current-dependent intrinsic resistive transition of NbN films. We find that, by including this current dependence, we can correctly predict the complete current-voltage characteristics, showing excellent agreement with measurements for both...journal article 2005
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Kooi, J.W. (author), Baselmans, J.J.A. (author), Hajenius, M. (author), Gao, J.R. (author), Klapwijk, T.M. (author), Dieleman, P. (author), Baryshev, A. (author), De Lange, G. (author)The intermediate frequency (IF) characteristics, the frequency dependent IF impedance, and the mixer conversion gain of a small area hot electron bolometer (HEB) have been measured and modeled. The device used is a twin slot antenna coupled NbN HEB mixer with a bridge area of 1×0.15??m2, and a critical temperature of 8.3?K. In the experiment the...journal article 2007
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Gao, J.R. (author), Hajenius, M. (author), Tichelaar, F.D. (author), Klapwijk, T.M. (author), Voronov, B. (author), Grishin, E. (author), Gol'tsman, G. (author), Zorman, C.A. (author), Mehregany, M. (author)The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800?°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4...journal article 2007