Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used, leakage current flowing through the gate insulator results in an irreversible degradation of the single...

Field-effect transistors on tetracene single crystals

We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of 0.4?cm2/V?s. The nonmonotonous temperature dependence of the mobility, its weak gate voltage dependence, as well as the...

Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

The scaling behavior of the transfer characteristics of solution-processed disordered organic thin-film transistors with channel length is investigated. This is done for a variety of organic semiconductors in combination with gold injecting electrodes. From the channel-length dependence of the transistor resistance in the conducting ON-state, we...

Switch-on voltage in disordered organic field-effect transistors

The switch-on voltage for disordered organic field-effect transistors is defined as the flatband voltage, and is used as a characterization parameter. The transfer characteristics of the solution processed organic semiconductors pentacene, poly(2,5-thienylene vinylene) and poly(3-hexyl thiophene) are modeled as a function of temperature and gate...