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Isabella, O. (author), Kr?, J. (author), Zeman, M. (author)Substrates with a modulated surface texture were prepared by combining different interface morphologies. The spatial frequency surface representation method is used to evaluate the surface modulation. When combining morphologies with appropriate geometrical features, substrates exhibit an increased scattering level in a broad wavelength region....journal article 2010
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Westra, J.M. (author), Vavrunkova, V. (author), Sutta, P. (author), Van Swaaij, R.A.C.M.M. (author), Zeman, M. (author)Thin-film poly-crystalline silicon (poly c-Si) on glass obtained by crystallization of an amorphous silicon (a-Si) film is a promising material for low cost, high efficiency solar cells. Our approach to obtain this material is to crystallize a-Si films on glass by solid phase crystallization (SPC). As the grain size of SPC poly c-Si films will...journal article 2010
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Johnson, B.C. (author), Tettamanzi, G.C. (author), Alves, A.D.C. (author), Thompson, S. (author), Yang, C. (author), Verduijn, J. (author), Mol, J.A. (author), Wacquez, R. (author), Vinet, M. (author), Sanquer, M. (author), Rogge, S. (author), Jamieson, D.N. (author)We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single...journal article 2010
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Verduijn, J. (author), Tettamanzi, G.C. (author), Lansbergen, G.P. (author), Collaert, N. (author), Biesemans, S. (author), Rogge, S. (author)In this letter, we describe the observation of the interference of conduction paths induced by two donors in a nanoscale silicon transistor, resulting in a Fano resonance. This demonstrates the coherent exchange of electrons between two donors. In addition, the phase difference between the two conduction paths can be tuned by means of a magnetic...journal article 2010
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On the surface roughness development of hydrogenated amorphous silicon deposited at low growth ratesWank, M.A. (author), Van Swaaij, R.A.C.M.M. (author), Van de Sanden, M.C.M. (author)The surface roughness evolution of hydrogenated amorphous silicon (a-Si:H) films has been studied using in situ spectroscopic ellipsometry for a temperature range of 150–400?°C. The effect of external rf substrate biasing on the coalescence phase is discussed and a removal/densification of a hydrogen-rich layer is suggested to explain the...journal article 2009
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Zwanenburg, F.A. (author), Van Loon, A.A. (author), Steele, G.A. (author), Rijmenam, C.E.W.M. (author), Balder, T. (author), Fang, Y. (author), Lieber, C.M. (author), Kouwenhoven, L.P. (author)We report the realization of extremely small single quantum dots in p-type silicon nanowires, defined by Schottky tunnel barriers with Ni and NiSi contacts. Despite their ultrasmall size the NiSi–Si–NiSi nanowire quantum dots readily allow spectroscopy of at least ten consecutive holes, and additionally they display a pronounced excited-state...journal article 2009
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Chen, P. (author), Salemink, H.W.M. (author), Alkemade, P.F.A. (author)Ion-beam-induced deposition (IBID) is a powerful technique for prototyping three-dimensional nanostructures. To study its capability for this purpose, the authors investigate the proximity effect in IBID of nanopillars. In particular, the changes in shape and dimension of pillars are studied when a second pillar is grown near an existing pillar....journal article 2009
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Sadeghian, H. (author), Yang, C.K. (author), Goosen, J.F.L. (author), Van der Drift, E. (author), Bossche, A. (author), French, P.J. (author), Van Keulen, F. (author)This letter presents the application of electrostatic pull-in instability to study the size-dependent effective Young’s Modulus ? ( ~170–70?GPa) of [110] silicon nanocantilevers (thickness ~1019–40?nm). The presented approach shows substantial advantages over the previous methods used for characterization of nanoelectromechanical systems...journal article 2009
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Pavlov, S.G. (author), Böttger, U. (author), Hovenier, J.N. (author), Abrosimov, N.V. (author), Riemann, H. (author), Zhukavin, R.K. (author), Shastin, V.N. (author), Redlich, B. (author), Van der Meer, A.F.G. (author), Hübers, H.W. (author)Stimulated Raman emission in the terahertz frequency range (4.8–5.1 THz and 5.9–6.5 THz) has been realized by optical excitation of arsenic donor centers in silicon at low temperatures. The Stokes shift of the observed laser emission is 5.42 THz which is equal to the Raman-active donor electronic transition between the ground 1s(A1) and the...journal article 2009
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Krc, J. (author), Zeman, M. (author), Luxembourg, S.L. (author), Topic, M. (author)A concept of a modulated one-dimensional photonic-crystal (PC) structure is introduced as a back reflector for thin-film solar cells. The structure comprises two PC parts, each consisting of layers of different thicknesses. Using layers of amorphous silicon and amorphous silicon nitride a reflectance close to 100% is achieved over a broad...journal article 2009
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Pieters, B.E. (author), Stiebig, H. (author), Zeman, M. (author), Van Swaaij, R.A.C.M.M. (author)Microcrystalline silicon (?c-Si:H) is a promising material for application in multijunction thin-film solar cells. A detailed analysis of the optoelectronic properties is impeded by its complex microstructural properties. In this work we will focus on determining the mobility gap of ?c-Si:H material. Commonly a value of 1.1?eV is found, similar...journal article 2009
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Pujada, B.R. (author), Tichelaar, F.D. (author), Arnoldbik, W.M. (author), Sloof, W.G. (author), Janssen, G.C.A.M. (author)Growth stress in tungsten carbide-diamond-like carbon coatings, sputter deposited in a reactive argon/acetylene plasma, has been studied as a function of the acetylene partial pressure. Stress and microstructure have been investigated by wafer curvature and transmission electron microscopy (TEM) whereas composition and energy distribution...journal article 2009
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Weis, C.D. (author), Schuh, A. (author), Batra, A. (author), Persaud, A. (author), Rangelow, I.W. (author), Bokor, J. (author), Lo, C.C. (author), Cabrini, S. (author), Sideras-Haddad, E. (author), Fuchs, G.D. (author), Hanson, R. (author), Awschalom, D.D. (author), Schenkel, T. (author)The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species, and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which function is based on the manipulation of quantum states in single atoms, such as proposed quantum computers....journal article 2008
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Matsuki, N. (author), Ishihara, R. (author), Baiano, A. (author), Beenakker, C.I.M. (author)We used scanning capacitance microscopy (SCM) to investigate the electrical activity of grain boundaries consisting of random and coincidence-site-lattice (CSL) boundaries in location-controlled silicon islands, which were fabricated using the ?-Czochralski process with an excimer laser. The SCM results suggest that the electrical activity of...journal article 2008
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Brasser, H.J. (author), Krijger, G.C. (author), Wolterbeek, H.T. (author)Silicon is involved in numerous important structural and functional roles in a wide range of organisms, including diatoms, plants, and humans, but clear mechanisms have been discovered only in diatoms and sponges. Silicate availability influences metal concentrations within various cell- and tissue-types, but a mechanism has not been discovered...journal article 2008
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Pavlov, S.G. (author), Hübers, H.W. (author), Böttger, U. (author), Zhukavin, R.K. (author), Shastin, V.N. (author), Hovenier, J.N. (author), Redlich, B. (author), Abrosimov, N.V. (author), Riemann, H. (author)Raman-type stimulated emission at frequencies between 5.0 and 5.2?THz as well as between 6.1 and 6.4?THz has been realized in silicon crystals doped by phosphorus donors. The Raman laser operates at around 5?K under optical excitation by a pulsed, frequency-tunable infrared free electron laser. The frequencies of the observed laser emission are...journal article 2008
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Civale, Y. (author), Nanver, L.K. (author), Alberici, S.G. (author), Gammon, A. (author), Kelly, I. (author)A procedure has been implemented for a quantitative aluminum-doping profiling of µm-scale aluminum-induced solid-phase-epitaxy (SPE) Si islands formed at 400°C. The aluminum concentration was measured to be 1–2×1019 cm?3, which is about 10 times higher than previously reported electrical activation levels. The elemental concentration was...journal article 2008
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- Kalmanovitz, N.R. (author), Hoxha, I. (author), Jin, Y. (author), Vitkalov, S.A. (author), Sarachik, M.P. (author), Larkin, I.A. (author), Klapwijk, T.M. (author) journal article 2008
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Zhukavin, R.K. (author), Shastin, V.N. (author), Pavlov, S.G. (author), Hübers, H.W. (author), Hovenier, J.N. (author), Klaassen, T.O. (author), Van der Meer, A.F.G. (author)Small signal gain measurements of optically excited terahertz silicon lasers are reported. Two types of lasers, Si:P and Si:Bi, were investigated. They were optically excited with radiation from a free electron laser or a CO2 laser. The experiments were performed with an oscillator-amplifier scheme where one sample serves as a laser while the...journal article 2007
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Yan, F. (author), Migliorato, P. (author), Ishihara, R. (author)The influence of twin boundaries on the characteristics of single grain-silicon thin film transistors has been analyzed by three-dimensional simulation. The simulations show that the orientation and the location of a twin boundary could affect the field-effect mobility and the leakage current of a device. The field-effect mobility increases with...journal article 2007