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Switch-on voltage in disordered organic field-effect transistors

Meijer, E.J. (author), Tanase, C. (author), Blom, P.W.M. (author), Van Veenendaal, E. (author), Huisman, B.H. (author), De Leeuw, D.M. (author), Klapwijk, T.M. (author)

The switch-on voltage for disordered organic field-effect transistors is defined as the flatband voltage, and is used as a characterization parameter. The transfer characteristics of the solution processed organic semiconductors pentacene, poly(2,5-thienylene vinylene) and poly(3-hexyl thiophene) are modeled as a function of temperature and gate...

journal article 2002

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Enhanced tunneling across nanometer-scale metal–semiconductor interfaces

Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author)

We have measured electrical transport across epitaxial, nanometer-sized metal–semiconductor interfaces by contacting CoSi2 islands grown on Si(111) with the tip of a scanning tunneling microscope. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be ? 104 times larger...

journal article 2002

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Direct demonstration of circulating currents in a controllable µ-SQUID generated by a 0 to µ transition of the weak links

Baselmans, J.J.A. (author), Wees, B.J. (author), Klapwijk, T.M. (author)

journal article 2002

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Spin polarization of strongly interacting two-dimensional electrons: The role of disorder

Vitkalov, S.A. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author)

journal article 2002

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Sharp increase of the effective mass near the critical density in a metallic two-dimensional electron system

Shashkin, A.A. (author), Kravchenko, S.V. (author), Dolgopolov, V.T. (author), Klapwijk, T.M. (author)

journal article 2002

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One-dimensional ring in the presence of Rashba spin-orbit interaction: Derivation of the correct Hamiltonian

Meijer, F.E. (author), Morpurgo, A.F. (author), Klapwijk, T.M. (author)

journal article 2002

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Universal Behavior of the Resistance Noise across the Metal-Insulator Transition in Silicon Inversion Layers

Jaroszynki, J. (author), Popovic, D. (author), Klapwijk, T.M. (author)

journal article 2002

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Direct observation of the transition from the conventional superconducting state to the ¿ state in a controllable Josephson Junction

Baselmans, J.J.A. (author), Heikkilä, T.T. (author), van Wees, J.B. (author), Klapwijk, T.M. (author)

journal article 2002

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Temperature and angular dependence of the anisotropic magnetoresistance in epitaxial Fe films

van Gorkom, R.P. (author), Caro, J. (author), Klapwijk, T.M. (author), Radelaar, S. (author)

journal article 2001

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Thermal time constant of Nb diffusion-cooled superconducting hot-electron bolometer mixers

Wilms Fleet, D. (author), Gao, J.R. (author), Klapwijk, T.M. (author), de Eorte, P.A.J. (author)

journal article 2001

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Nonequilibrium supercurrent transport in controllable superconductor-normal-metal-superconductor junctions

Baselmans, J.J.A. (author), van Wees, B.J. (author), Klapwijk, T.M. (author)

journal article 2001

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Scaling of the magnetoconductivity of silicon MOSFETs: Evidence for a quantum phase transition in two dimensions

Vitkalov, S.A. (author), Zheng, H. (author), Mertes, K.M. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author)

journal article 2001

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Hall coefficient of a dilute two-dimensional electron system in a parallel magnetic field

Vitkalov, S.A. (author), Zheng, H. (author), Mertes, K.M. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author)

journal article 2001

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Nb superconducting hot electron bolometer mixers coupled with microstrip lines

Ganzevles, W.F.M. (author), Yagoubov, P. (author), Gao, J.R. (author), Klapwijk, T.M. (author), de Korte, P.A.J. (author)

journal article 2001

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Superconducting transition metal nitride films for THz SIS mixers

Iosad, N.N. (author), Roddatis, V.V. (author), Polyakov, S.N. (author), Varlashkin, A.V. (author), Jackson, B.D. (author), Dmitriev, P.N. (author), Gao, J.R. (author), Klapwijk, T.M. (author)

journal article 2001

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Metal-insulator transition in a 2D electron gas: Equivalence of two approaches for determining the critical point

Shashkin, A.A. (author), Kravchenko, S.V. (author), Klapwijk, T.M. (author)

journal article 2001

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Indication of the ferromagnetic instability in a dilute two-dimensional electron system

Shashkin, A.A. (author), Kravchenko, S.V. (author), Dolgopolov, V.T. (author), Klapwijk, T.M. (author)

journal article 2001

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Spin polarization of two-dimensional electrons determined from Shubnikov¿de Haas oscillations as a function of angle

Vitkalov, S.A. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author)

journal article 2001

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Temperature dependence of the resistivity of a dilute two-dimensional electron system in high parallel magnetic field

Mertes, K.M. (author), Zheng, H. (author), Vitkalov, S.A. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author)

journal article 2001

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Small Angle Shubnikov-de Haas Measurements in Silicon MOSFET's: The Effect of Strong In-Plane Magnetic Field

Vitkalov, S.A. (author), Zheng, H. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author)

Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of two increase of the frequency of Shubnikov-de Haas oscillations at H>H_{sat}. This signals the onset of full spin polarization above H_{sat}, the parallel field above which the resistivity saturates to a constant value.

journal article 2000