The design of a global shutter CMOS image sensor in 110nm technology

The goal of this work described in this thesis is to design a CMOS image sensor chip, implementing pixels with a 4.8?m pitch with a peripheral readout circuitry in a 110nm CMOS process. The architecture of the CMOS image sensor is presented, with a functional illustration for every block. The 8T global shutter pixel noise, circuit and layout are...