Searched for: department%3A%22Computer%255C%2BEngineering%22
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Mahmoud, A.N.N. (author), Vanderveken, Frederic (author), Adelmann, Christoph (author), Ciubotaru, Florin (author), Hamdioui, S. (author), Cotofana, S.D. (author)
By their very nature, spin waves (SWs) with different frequencies can propagate through the same waveguide, while mostly interfering with their own species. Therefore, more SW encoded data sets can coexist, propagate, and interact in parallel, which opens the road toward hardware replication-free parallel data processing. In this article, we...
journal article 2021
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Balakrishnan, Aneesh (author), Cardoso Medeiros, G. (author), Cem Gursoy, Cemil (author), Hamdioui, S. (author), Jenihhin, Maksim (author), Alexandrescu, Dan (author)
The Soft-Error (SE) reliability and the effects of Negative Bias Temperature Instability (NBTI) in deep submicron technologies are characterized as the major critical issues of high-performance integrated circuits. The previous scientific research studies provide a comprehensive description that the soft-error vulnerability becomes more severe...
conference paper 2021
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Taouil, M. (author), Reinbrecht, Cezar (author), Hamdioui, S. (author), Sepulveda, Johanna (author)
Dynamic Random Access Memory (DRAM)-based systems are widely used in mobile and portable applications where low-cost and high-storage memory capability are required. However, such systems are prone to attacks. A latent threat to DRAM-based system security is the so-called Rowhammer attacks. By repeatedly accessing memory, an attacker is able to...
conference paper 2021
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Diware, S.S. (author), Gebregiorgis, A.B. (author), Joshi, Rajiv V. (author), Hamdioui, S. (author), Bishnoi, R.K. (author)
Emerging memristor-based computing has the potential to achieve higher computational efficiency over conventional architectures. Bit-slicing scheme, which represents a single neural weight using multiple memristive devices, is usually introduced in memristor-based neural networks to meet high bit-precision demands. However, the accuracy of such...
conference paper 2021
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Sarkar, A. (author), Al-Ars, Z. (author), Bertels, K.L.M. (author)
In this article, we present QuASeR, a reference-free DNA sequence reconstruction implementation via de novo assembly on both gate-based and quantum annealing platforms. This is the first time this important application in bioinformatics is modeled using quantum computation. Each one of the four steps of the implementation (TSP, QUBO,...
journal article 2021
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Wu, L. (author), Rao, Siddharth (author), Taouil, M. (author), Marinissen, Erik Jan (author), Kar, Gouri Sankar (author), Hamdioui, S. (author)
Understanding the manufacturing defects in magnetic tunnel junctions (MTJs), which are the data-storing elements in STT-MRAMs, and their resultant faulty behaviors are crucial for developing high-quality test solutions. This paper introduces a new type of MTJ defect: synthetic anti-ferromagnet flip (SAFF) defect, wherein the magnetization in...
conference paper 2021
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Caetano Garaffa, L. (author), Aljuffri, A.A.M. (author), Reinbrecht, Cezar (author), Hamdioui, S. (author), Taouil, M. (author), Sepulveda, Johanna (author)
Spiking Neural Networks (SNNs) are a strong candidate to be used in future machine learning applications. SNNs can obtain the same accuracy of complex deep learning networks, while only using a fraction of its power. As a result, an increase in popularity of SNNs is expected in the near future for cyber physical systems, especially in the...
conference paper 2021
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Köylü, T.C. (author), Okkerman, Hans (author), Reinbrecht, Cezar (author), Hamdioui, S. (author), Taouil, M. (author)
Internet of things (IoT) devices are appearing in all aspects of our digital life. As such, they have become prime targets for attackers and hackers. An adequate protection against attacks is only possible when the confidentiality and integrity of the data and applications of these devices are secured. State-of-the-art solutions mostly address...
conference paper 2021
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Xue, X. (author), Patra, B (author), van Dijk, J.P.G. (author), Samkharadze, Nodar (author), Corna, A. (author), Paquelet Wuetz, B. (author), Sammak, A. (author), Scappucci, G. (author), Veldhorst, M. (author), Sebastiano, F. (author), Babaie, M. (author), Charbon-Iwasaki-Charbon, E. (author), Vandersypen, L.M.K. (author)
The most promising quantum algorithms require quantum processors that host millions of quantum bits when targeting practical applications<sup>1</sup>. A key challenge towards large-scale quantum computation is the interconnect complexity. In current solid-state qubit implementations, an important interconnect bottleneck appears between the...
journal article 2021
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Cardoso Medeiros, G. (author), Fieback, M. (author), Wu, L. (author), Taouil, M. (author), Bolzani Poehls, L. M. (author), Hamdioui, S. (author)
Manufacturing defects can cause hard-to-detect (HTD) faults in fin field-effect transistor (FinFET) static random access memories (SRAMs). Detection of these faults, such as random read outputs and out-of-spec parametric deviations, is essential when testing FinFET SRAMs. Undetected HTD faults result in test escapes, which lead to early in-field...
journal article 2021
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Mahmoud, A.N.N. (author), Vanderveken, Frederic (author), Adelmann, Christoph (author), Ciubotaru, Florin (author), Hamdioui, S. (author), Cotofana, S.D. (author)
By their very nature, voltage/current excited Spin Waves (SWs) propagate through waveguides without consuming noticeable power. If SW excitation is performed by the continuous application of voltages/currents to the input, which is usually the case, the overall energy consumption is determined by the transducer power and the circuit critical...
conference paper 2021
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Copetti, Thiago (author), Cardoso Medeiros, G. (author), Taouil, M. (author), Hamdioui, S. (author), Poehls, Leticia Bolzani (author), Balen, Tiago (author)
Fin Field-Effect Transistor (FinFET) technology enables the continuous downscaling of Integrated Circuits (ICs), using the Complementary Metal-Oxide Semiconductor (CMOS) technology in accordance with the More Moore domain. Despite demonstrating improvements on short channel effect and overcoming the growing leakage problem of planar CMOS...
journal article 2021
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Poehls, L. M.Bolzani (author), Fieback, M. (author), Hoffmann-Eifert, S. (author), Copetti, T. (author), Brum, E. (author), Menzel, S. (author), Hamdioui, S. (author), Gemmeke, T. (author)
Complementary Metal Oxide Semiconductor (CMOS) technology has been scaled down over the last forty years making possible the design of high-performance applications, following the predictions made by Gordon Moore and Robert H. Dennard in the 1970s. However, there is a growing concern that device scaling, while maintaining cost-effective...
journal article 2021
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Cardoso Medeiros, G. (author), Fieback, M. (author), Gebregiorgis, A.B. (author), Taouil, M. (author), Bolzani Poehls, L. (author), Hamdioui, S. (author)
Manufacturing defects in FinFET SRAMs can cause hard-to-detect faults such as Random Read Faults (RRFs). Detection of RRFs is not trivial, as they may not lead to incorrect outputs. Undetected RRFs become test escapes, which might lead to no-trouble-found devices and early in-field failures. Therefore, the detection of RRFs is of utmost...
conference paper 2021
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Mahmoud, A.N.N. (author), Adelmann, Christoph (author), Vanderveken, Frederic (author), Cotofana, S.D. (author), Ciubotaru, Florin (author), Hamdioui, S. (author)
Having multi-output logic gates saves much energy because the same structure can be used to feed multiple inputs of next stage gates simultaneously. This paper proposes novel triangle shape fanout of 2 spin wave Majority and XOR gates; the Majority gate is achieved by phase detection, whereas the XOR gate is achieved by threshold detection. The...
conference paper 2021
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Mahmoud, A.N.N. (author), Vanderveken, Frederic (author), Adelmann, Christoph (author), Ciubotaru, Florin (author), Cotofana, S.D. (author), Hamdioui, S. (author)
The key enabling factor for Spin Wave (SW) technology utilization for building ultra low power circuits is the ability to energy efficiently cascade SW basic computation blocks. SW Majority gates, which constitute a universal gate set for this paradigm, operating on phase encoded data are not input output coherent in terms of SW amplitude....
journal article 2021
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Mahmoud, A.N.N. (author), Vanderveken, Frederic (author), Ciubotaru, Florin (author), Adelmann, Christoph (author), Cotofana, S.D. (author), Hamdioui, S. (author)
Spin Waves (SWs) propagate through magnetic waveguides and interfere with each other without consuming noticeable energy, which opens the road to new ultra-low energy circuit designs. In this paper we build upon SW features and propose a novel energy efficient Full Adder (FA) design consisting of 1 Majority and 2 XOR gates, which outputs Sum...
conference paper 2021
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Cardoso Medeiros, G. (author), Fieback, M. (author), Copetti, Thiago (author), Gebregiorgis, A.B. (author), Taouil, M. (author), Bolzani Poehls, L. M. (author), Hamdioui, S. (author)
Manufacturing defects in FinFET SRAMs can cause hard-to-detect faults such as Undefined State Faults (USFs). Detection of USFs is not trivial, as they may not lead to incorrect functionality. Nevertheless, undetected USFs may have a severe impact on the memory's quality: they can cause random read outputs, which might lead to test escapes and no...
conference paper 2021
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Fieback, M. (author), Cardoso Medeiros, G. (author), Gebregiorgis, A.B. (author), Aziza, Hassen (author), Taouil, M. (author), Hamdioui, S. (author)
Industry is prototyping and commercializing Resistive Random Access Memories (RRAMs). Unfortunately, RRAM devices introduce new defects and faults. Hence, high-quality test solutions are urgently needed. Based on silicon measurements, this paper identifies a new RRAM unique fault, the Intermittent Undefined State Fault (IUSF); this fault causes...
conference paper 2021
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Aziza, Hassan (author), Hamdioui, S. (author), Fieback, M. (author), Taouil, M. (author), Moreau, Mathieu (author), Girard, Patrick (author), Virazel, Arnaud (author), Coulié, Karine (author)
RRAM density enhancement is essential not only to gain market share in the highly competitive emerging memory sector but also to enable future high-capacity and power-efficient brain-inspired systems, beyond the capabilities of today’s hardware. In this paper, a novel design scheme is proposed to realize reliable and uniform multi-level cell ...
journal article 2021
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