Effects of (i)a-Si: H deposition temperature on high-efficiency silicon heterojunction solar cells

Excellent surface passivation induced by (i)a-Si:H is critical to achieve high-efficiency silicon heterojunction (SHJ) solar cells. This is key for conventional single-junction cell applications but also for bottom cell application in tandem devices. In this study, we investigated the effects of (i)a-Si:H deposition temperature on passivation...

Scaling and Modelling Photoluminescence of Si Nanoparticles Embedded in Silicon Oxide

Silicon nanoparticles (NPs) embedded in a dielectric matrix, such as silicon oxide, pose a promising candidate for all-silicon multi-junction solar cells. This material is often analysed with photoluminescence (PL) measurements. In literature, the intensities of different PL measurements are either directly compared or normalized. Normalization...

Wet-chemical Treatment for Improved Surface Passivation of Textured Silicon Heterojunction Solar Cells

Silicon heterojunction (SHJ) solar cells constantly gain more attention due to their low cost and relatively high efficiency. An important aspect of these solar cells is the incorporation of intrinsic hydrogenated amorphous silicon (a-Si:H) layers at each side of the c-Si wafer, which has increased the efficiency potential due to the excellent...

Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces

We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7–70 eV), but linearly proportional to the ion flux (6×1014–6×1015?ions?cm?2?s?1). This result suggests that the ion...