Searched for: department:"Electrical%5C%2BSustainable%5C%2BEnergy"
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document
van de Loo, B.W.H. (author), Ingenito, A. (author), Verheijen, M.P.A.M. (author), Isabella, O. (author), Zeman, M. (author)
Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further...
journal article 2017
document
Yang, G. (author), Ingenito, A. (author), Isabella, O. (author), Zeman, M. (author)
Ion-implanted poly-crystalline silicon (poly-Si), in combination with a tunnel oxide layer, is investigated as a carrier-selective passivating contact in c-Si solar cells based on an interdigitated back contact (IBC) architecture. The optimized poly-Si passivating contacts enable low interface recombination, resulting in implied VOC (iVOC) of...
journal article 2016
document
Isabella, O. (author), Vismara, R. (author), Ingenito, A. (author), Rezaei, N. (author), Zeman, M. (author)
The optical analysis of optically-textured and electrically-flat ultra-thin crystalline silicon (c-Si) slabs is presented. These slabs were endowed with decoupled front titanium-dioxide (TiO2) / back silicon-dioxide (SiO2) dielectric textures and were studied as function of two types of back reflectors: standard silver (Ag) and dielectric...
journal article 2016
document
Yang, G. (author), Ingenito, A. (author), van Hameren, Nienke (author), Isabella, O. (author), Zeman, M. (author)
Ion-implanted passivating contacts based on poly-crystalline silicon (polySi) are enabled by tunneling oxide, optimized, and used to fabricate interdigitated back contact (IBC) solar cells. Both n-type (phosphorous doped) and p-type (boron doped) passivating contacts are fabricated by ion-implantation of intrinsic polySi layers deposited via low...
journal article 2016
document
Ingenito, A. (author), Isabella, O. (author), Zeman, M. (author)
The need for cost reduction requires using less raw material and cost-effective processes without sacrificing the conversion efficiency. For keeping high the generated photo-current, an advanced light trapping scheme for ultra-thin silicon wafers is here proposed, exhibiting absorptances up to 99% of 4n2 classical absorption limit for wafer...
conference paper 2014
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Ingenito, A. (author), Ortiz Lizcano, J.C. (author), Luxembourg, S.L. (author), Santbergen, R. (author), Weeber, A. (author), Isabella, O. (author), Zeman, M. (author)
At present, research in c-Si solar cells is focused on increasing the efficiency while reducing the amount of used materials. Since silicon wafer and metal contribute up to 50% to the cost of a module, it is crucial to reduce the amount of these materials to fabricate cost-effective modules. In particular, for reducing the consumption of metal,...
journal article 2014
document
Deligiannis, D. (author), Alivizatos, S. (author), Ingenito, A. (author), Zhang, D. (author), Van Sebille, M. (author), Van Swaaij, R.A.C.M.M. (author), Zeman, M. (author)
Silicon heterojunction (SHJ) solar cells constantly gain more attention due to their low cost and relatively high efficiency. An important aspect of these solar cells is the incorporation of intrinsic hydrogenated amorphous silicon (a-Si:H) layers at each side of the c-Si wafer, which has increased the efficiency potential due to the excellent...
journal article 2014
Searched for: department:"Electrical%5C%2BSustainable%5C%2BEnergy"
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