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document
Scotuzzi, M. (author), Kamerbeek, M.J. (author), Goodyear, A. (author), Cooke, M. (author), Hagen, C.W. (author)
To demonstrate the possibility of using EBID masks for sub-10 nm pattern transfer into silicon, first experiments were carried out by using 20-40 nm EBID masks, that were etched by different chemistries. It is experimentally verified that recipes based on hydrogen bromide, chlorine and boron trichloride can selectively etch silicon when using 20...
conference paper 2015
document
Scotuzzi, M. (author), Kamerbeek, M.J. (author), Goodyear, A. (author), Cooke, M. (author), Hagen, C.W. (author)
To demonstrate the possibility of using electron beam-induced deposition (EBID) masks for sub-10 nm pattern transfer into silicon, first experiments were carried out by using 20- to 40-nm EBID masks, which were etched by different chemistries. It is experimentally verified that recipes based on hydrogen bromide, chlorine, and boron trichloride...
journal article 2015